NOPR Collection: http://nopr.niscpr.res.in/handle/123456789/24165 2026-10-10T23:52:48Z 2026-10-10T23:52:48Z Growth and characterization of vacuum deposited cadmium telluride thin films Shreekanthan, K N Kasturi, V B Shivakumar, G K http://nopr.niscpr.res.in/handle/123456789/24308 2013-11-28T16:42:32Z 2003-10-01T00:00:00Z Title: Growth and characterization of vacuum deposited cadmium telluride thin films Authors: Shreekanthan, K N; Kasturi, V B; Shivakumar, G K Abstract: Semiconducting thin films of cadmium telluride, both <i>p</i>-type and <i>n</i>-type, have been prepared by conventional thermal evaporation technique. The influence of various growth parameters such as the rate of deposition, deposition temperature, post-deposition heat treatment, and source material composition has been investigated. The films deposited at high deposition rates and low substrate temperatures exhibited an excess of tellurium and showed a <i>p</i>-type conductivity, whereas those deposited at high substrate temperature and low deposition rates contained excess cadmium and are <i>n</i>-type in nature. An intrinsic bandgap of 1.49 eV for stoichiometric films obtained by both electrical and optical characterization is reported. Page(s): 433-436 2003-10-01T00:00:00Z <span style="font-size:12.0pt;line-height: 115%;font-family:"Times New Roman","serif";mso-fareast-font-family:"Times New Roman"; mso-ansi-language:EN-IN;mso-fareast-language:EN-IN;mso-bidi-language:HI" lang="EN-IN">Electrcial conduction in chemically deposited CdSe<sub>1-x</sub>Te<sub>x</sub> mixed/alloyed thin films</span> More, P D Deshmukh, L P http://nopr.niscpr.res.in/handle/123456789/24307 2013-11-27T16:40:41Z 2003-10-01T00:00:00Z Title: <span style="font-size:12.0pt;line-height: 115%;font-family:"Times New Roman","serif";mso-fareast-font-family:"Times New Roman"; mso-ansi-language:EN-IN;mso-fareast-language:EN-IN;mso-bidi-language:HI" lang="EN-IN">Electrcial conduction in chemically deposited CdSe<sub>1-x</sub>Te<sub>x</sub> mixed/alloyed thin films</span> Authors: More, P D; Deshmukh, L P Abstract: CdSe<sub>1-x</sub>Te<sub>x</sub> films are crystalline in nature over the whole range of composition with a predominant wurzite structure. The compositional analysis showed that in Cd-rich films compared to Te content, Se content in the films is slightly greater for each of the compositions. The surface morphology showed diffused grained polycrysalline texture with overgrowth developed in some cases. The temperature dependences of electrical conductivity, thermoelectric power, carrier concentration and mobility are examined and the influence of the Te-concentration on them is investigated and explained in terms of Petritz grain boundary scattering limited model. The dc electrical conductivity is found to decrease with an increase in <i>x </i>up to 0.08 and thereafter increased continuously as <i>x </i>was increased. The results indicated that the electrical transport properties of chemically deposited Cd (Se, Te) films are governed by the intergrain barrier potential, which is sensitively dependent on the Te-concentration in the CdSe films. Page(s): 427-432 2003-10-01T00:00:00Z <span style="font-size:12.0pt;line-height: 115%;font-family:"Times New Roman","serif";mso-fareast-font-family:"Times New Roman"; mso-ansi-language:EN-IN;mso-fareast-language:EN-IN;mso-bidi-language:HI" lang="EN-IN">Preparation of net-shape Al<sub>2</sub>O<sub>3</sub>/Al<sub>3</sub>Ni <i>in situ </i>composites by reactive melt penetration</span> Rao, V Venkateswara http://nopr.niscpr.res.in/handle/123456789/24306 2013-11-28T16:42:27Z 2003-10-01T00:00:00Z Title: <span style="font-size:12.0pt;line-height: 115%;font-family:"Times New Roman","serif";mso-fareast-font-family:"Times New Roman"; mso-ansi-language:EN-IN;mso-fareast-language:EN-IN;mso-bidi-language:HI" lang="EN-IN">Preparation of net-shape Al<sub>2</sub>O<sub>3</sub>/Al<sub>3</sub>Ni <i>in situ </i>composites by reactive melt penetration</span> Authors: Rao, V Venkateswara Abstract: By reacting silica preforms with a molten Al-Ni alloy net- shape, <i>in situ </i>Al<sub>2</sub>O<sub>3</sub>/Al<sub>3</sub>Ni composites were prepared. Presence of Ni in the melt was found to slow down the reaction between silica and aluminium. The density of the composites was found to be 3.98 ± 0.12 g/cc, and they were found to be much harder than Al<sub>2</sub>O<sub>3</sub>/Al composites. Page(s): 424-426 2003-10-01T00:00:00Z Study of black and composite agglomerates of cork as thermal insulating materials Diaz-Diez, M A Diaz-Parralejo, A Macias-Garcia, A Rosa Blanco, P de la Gomez-Serrano, V http://nopr.niscpr.res.in/handle/123456789/24305 2013-11-29T16:42:36Z 2003-10-01T00:00:00Z Title: Study of black and composite agglomerates of cork as thermal insulating materials Authors: Diaz-Diez, M A; Diaz-Parralejo, A; Macias-Garcia, A; Rosa Blanco, P de la; Gomez-Serrano, V Abstract: The behaviour of cork agglomerates as thermal insulating materials was studied. The products used were black agglomerate (BA) and composite agglomerate (CA), which were prepared from black regranulate (BR) of cork. In the preparation of the agglomerates, the specimen thickness for BA and the particle size of BR and the resin dosage for CA were varied. A procedure was proposed for measuring the thermal conductivity of materials in a granular or powder form. The thermal conductivity of BR, BA, and CA was determined using a Ketherm QTM-D3 fast meter, provided with an adapter QTM PA1. The behaviour as a thermal insulating material can be improved by decreasing the particle size for BR and by increasing the specimen thickness for BA. In the case of CA, the best behaviour is shown when the intermediate particle size of BR and the highest resin dosage are used in its preparation. Frequently, the insulating behaviour is better for CA than for BR, and also for BA than for CA. Page(s): 419-423 2003-10-01T00:00:00Z