<?xml version="1.0" encoding="UTF-8"?>
<feed xmlns="http://www.w3.org/2005/Atom" xmlns:dc="http://purl.org/dc/elements/1.1/">
  <title>NOPR Collection:</title>
  <link rel="alternate" href="http://nopr.niscpr.res.in/handle/123456789/29686" />
  <subtitle />
  <id>http://nopr.niscpr.res.in/handle/123456789/29686</id>
  <updated>2026-10-09T19:37:01Z</updated>
  <dc:date>2026-10-09T19:37:01Z</dc:date>
  <entry>
    <title>&lt;span style="font-size:11.0pt;mso-bidi-font-size:10.0pt; line-height:115%;font-family:"Calibri","sans-serif";mso-ascii-theme-font:minor-latin; mso-fareast-font-family:"Times New Roman";mso-fareast-theme-font:minor-fareast; mso-hansi-theme-font:minor-latin;mso-bidi-font-family:"Times New Roman"; mso-ansi-language:EN-US;mso-fareast-language:EN-US;mso-bidi-language:AR-SA"&gt;Structure dielectric and AC conduction properties of thermally evaporated Se&lt;sub&gt;30&lt;/sub&gt;&lt;span style="font-size:11.0pt;mso-bidi-font-size:10.0pt;line-height:115%;font-family: "Calibri","sans-serif";mso-ascii-theme-font:minor-latin;mso-fareast-font-family: "Times New Roman";mso-fareast-theme-font:minor-fareast;mso-hansi-theme-font: minor-latin;mso-bidi-font-family:Arial;mso-ansi-language:EN-US;mso-fareast-language: EN-US;mso-bidi-language:AR-SA"&gt;T&lt;span style="font-size:11.0pt; mso-bidi-font-size:10.0pt;line-height:115%;font-family:"Calibri","sans-serif"; mso-ascii-theme-font:minor-latin;mso-fareast-font-family:"Times New Roman"; mso-fareast-theme-font:minor-fareast;mso-hansi-theme-font:minor-latin; mso-bidi-font-family:"Times New Roman";mso-ansi-language:EN-US;mso-fareast-language: EN-US;mso-bidi-language:AR-SA"&gt;e&lt;sub&gt;70&lt;/sub&gt; thin films&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;</title>
    <link rel="alternate" href="http://nopr.niscpr.res.in/handle/123456789/29765" />
    <author>
      <name>Balasbramaniama, T</name>
    </author>
    <author>
      <name>Narayandass, Sa K</name>
    </author>
    <author>
      <name>Mangalaraj, D</name>
    </author>
    <id>http://nopr.niscpr.res.in/handle/123456789/29765</id>
    <updated>2016-07-20T06:31:27Z</updated>
    <published>1997-12-01T00:00:00Z</published>
    <summary type="text">Title: &lt;span style="font-size:11.0pt;mso-bidi-font-size:10.0pt; line-height:115%;font-family:"Calibri","sans-serif";mso-ascii-theme-font:minor-latin; mso-fareast-font-family:"Times New Roman";mso-fareast-theme-font:minor-fareast; mso-hansi-theme-font:minor-latin;mso-bidi-font-family:"Times New Roman"; mso-ansi-language:EN-US;mso-fareast-language:EN-US;mso-bidi-language:AR-SA"&gt;Structure dielectric and AC conduction properties of thermally evaporated Se&lt;sub&gt;30&lt;/sub&gt;&lt;span style="font-size:11.0pt;mso-bidi-font-size:10.0pt;line-height:115%;font-family: "Calibri","sans-serif";mso-ascii-theme-font:minor-latin;mso-fareast-font-family: "Times New Roman";mso-fareast-theme-font:minor-fareast;mso-hansi-theme-font: minor-latin;mso-bidi-font-family:Arial;mso-ansi-language:EN-US;mso-fareast-language: EN-US;mso-bidi-language:AR-SA"&gt;T&lt;span style="font-size:11.0pt; mso-bidi-font-size:10.0pt;line-height:115%;font-family:"Calibri","sans-serif"; mso-ascii-theme-font:minor-latin;mso-fareast-font-family:"Times New Roman"; mso-fareast-theme-font:minor-fareast;mso-hansi-theme-font:minor-latin; mso-bidi-font-family:"Times New Roman";mso-ansi-language:EN-US;mso-fareast-language: EN-US;mso-bidi-language:AR-SA"&gt;e&lt;sub&gt;70&lt;/sub&gt; thin films&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;
Authors: Balasbramaniama, T; Narayandass, Sa K; Mangalaraj, D
Abstract: &lt;span style="font-size:11.0pt;mso-bidi-font-size:10.0pt;&#xD;
line-height:115%;font-family:" calibri","sans-serif";mso-ascii-theme-font:minor-latin;="" mso-fareast-font-family:"times="" new="" roman";mso-fareast-theme-font:minor-fareast;="" mso-hansi-theme-font:minor-latin;mso-bidi-font-family:"times="" roman";="" mso-ansi-language:en-us;mso-fareast-language:en-us;mso-bidi-language:ar-sa"=""&gt;Thin&#xD;
films of Se&lt;sub&gt;30&lt;/sub&gt;Te&lt;sub&gt;70&lt;/sub&gt; are prepared by thermal evaporation&#xD;
onto well cleaned glass substrates at 2.7 mPa. The thicknesses of the films are&#xD;
measured by the Tolansky technique (Fizeau fringes) and are 81 and 138 nm&#xD;
respectively. The X-ray diffractogram shows that the as - deposited films are&#xD;
polycrystalline in nature. Annealing is found to improve the dielectric&#xD;
properties. The capacitance (&lt;i style="mso-bidi-font-style:normal"&gt;C&lt;/i&gt;) and&#xD;
loss factor (tan δ) are measured from 303-443K in the frequency range 1 kHz-1&#xD;
MHz. Capacitance decreases with increasing film thickness and applied&#xD;
frequency, while it increases with increase of temperature. The loss factor&#xD;
which shows a pronounced minimum with frequency, increases with the rise of&#xD;
temperature and (tan δ&lt;span style="font-size:11.0pt;mso-bidi-font-size:&#xD;
10.0pt;line-height:115%;font-family:" calibri","sans-serif";mso-ascii-theme-font:="" minor-latin;mso-fareast-font-family:"times="" new="" roman";mso-fareast-theme-font:="" minor-fareast;mso-hansi-theme-font:minor-latin;mso-bidi-font-family:arial;="" mso-ansi-language:en-us;mso-fareast-language:en-us;mso-bidi-language:ar-sa"=""&gt;)&lt;sub&gt;min&#xD;
&lt;/sub&gt;&lt;span style="font-size:11.0pt;mso-bidi-font-size:10.0pt;&#xD;
line-height:115%;font-family:" calibri","sans-serif";mso-ascii-theme-font:minor-latin;="" mso-fareast-font-family:"times="" new="" roman";mso-fareast-theme-font:minor-fareast;="" mso-hansi-theme-font:minor-latin;mso-bidi-font-family:"times="" roman";="" mso-ansi-language:en-us;mso-fareast-language:en-us;mso-bidi-language:ar-sa"=""&gt;shifts&#xD;
to a higher frequency. The large values of capacitance and dielectric constant&#xD;
(ϵ’) in the low frequency region indicate the possibility of an interfacial&#xD;
polarization mechanism. The dielectric relaxation phenomenon in these films is&#xD;
explained on the basis of dipolar reorientation. The activation energy&#xD;
calculated from the relaxation process is 0.094 and 0.23 eV at low and higher&#xD;
temperatures respectively. The frequency dependence of conductivity and the low&#xD;
value of the activation energy suggest that the conduction mechanism is due to&#xD;
electronic hopping.&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;
Page(s): 287-292</summary>
    <dc:date>1997-12-01T00:00:00Z</dc:date>
  </entry>
  <entry>
    <title>Characterization of directly and indirectly oxidized thin indium films</title>
    <link rel="alternate" href="http://nopr.niscpr.res.in/handle/123456789/29764" />
    <author>
      <name>Gopchandran, KG</name>
    </author>
    <author>
      <name>Joseph, Benny</name>
    </author>
    <author>
      <name>Abraham, Johny T</name>
    </author>
    <author>
      <name>Koshy, Peter</name>
    </author>
    <author>
      <name>Vaidyan, V K</name>
    </author>
    <id>http://nopr.niscpr.res.in/handle/123456789/29764</id>
    <updated>2016-07-20T06:31:14Z</updated>
    <published>1997-12-01T00:00:00Z</published>
    <summary type="text">Title: Characterization of directly and indirectly oxidized thin indium films
Authors: Gopchandran, KG; Joseph, Benny; Abraham, Johny T; Koshy, Peter; Vaidyan, V K
Abstract: &lt;span style="font-size:11.0pt;mso-bidi-font-size:10.0pt;&#xD;
line-height:115%;font-family:" calibri","sans-serif";mso-ascii-theme-font:minor-latin;="" mso-fareast-font-family:"times="" new="" roman";mso-fareast-theme-font:minor-fareast;="" mso-hansi-theme-font:minor-latin;mso-bidi-font-family:"times="" roman";="" mso-ansi-language:en-us;mso-fareast-language:en-us;mso-bidi-language:ar-sa"=""&gt;The&#xD;
structure and morphology of In&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; films prepared by&#xD;
direct and indirect oxidation mechanisms are reported. XRD studies of In&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;&#xD;
films prepared by annealing of vacuum deposited indium films have shown a&#xD;
&lt;111&gt; texture while the texture of reactively deposited (directly&#xD;
oxidized) films has been found sensitive to deposition conditions. SEM&#xD;
observations show porosity in films obtained by annealing and smooth&#xD;
polycrystalline nature for reactively deposited films. Electrical and optical&#xD;
properties of directly oxidized films are found to be superior to those of&#xD;
indirectly heated films.&lt;/span&gt;
Page(s): 282-286</summary>
    <dc:date>1997-12-01T00:00:00Z</dc:date>
  </entry>
  <entry>
    <title>Physico-chemical characteristics of fly ash samples from thermal power plants of Orissa</title>
    <link rel="alternate" href="http://nopr.niscpr.res.in/handle/123456789/29763" />
    <author>
      <name>Mohapatra, R</name>
    </author>
    <author>
      <name>Kanungo, S B</name>
    </author>
    <id>http://nopr.niscpr.res.in/handle/123456789/29763</id>
    <updated>2016-07-20T06:30:46Z</updated>
    <published>1997-12-01T00:00:00Z</published>
    <summary type="text">Title: Physico-chemical characteristics of fly ash samples from thermal power plants of Orissa
Authors: Mohapatra, R; Kanungo, S B
Abstract: Some&#xD;
physico-chemical characteristics of three fly ash samples have been studied&#xD;
with an objective to create a data base for different fly ash samples in the&#xD;
country. It has been observed that relevant physical properties of the samples&#xD;
show systematic variation with particle size distribution. Thus, while apparent&#xD;
density and optical or geometrical area increase with fineness of the particles&#xD;
from sample 1 to 3, true density, voidage and void volume exhibit opposite&#xD;
behaviour. Batch leaching studies indicate that whereas for samples 1 and 2&#xD;
most of the trace metals (except Cu) leach out rapidly from the surface of the&#xD;
ash particles in the &lt;i&gt;p&lt;/i&gt;H range 6.4-7.5, under acidic&#xD;
conditions (pH ~ 4.5) the rates of leaching of most trace metals, except Co and&#xD;
Cd, are relatively slow for sample 3. The &lt;i&gt;p&lt;/i&gt;H values of zero charge of the three&#xD;
major oxide constituents namely, SiO&lt;sub&gt;2&lt;/sub&gt;, Fe&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;&#xD;
and Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; as determined by the solid addition method,&#xD;
conform more or less to the literature values of 2.5, 7.0 and 9.5 respectively.&#xD;
Viscosity a measurement of aqueous suspension indicates that sample 3 is least&#xD;
hydrated in water and therefore shows low viscosity value even at high&#xD;
concentration of slurry.
Page(s): 271-281</summary>
    <dc:date>1997-12-01T00:00:00Z</dc:date>
  </entry>
  <entry>
    <title>Carbon fibre/epoxy composites: Effect of epoxy network and surface treatment of fibres on interfacial shear strength</title>
    <link rel="alternate" href="http://nopr.niscpr.res.in/handle/123456789/29762" />
    <author>
      <name>Varma, D S</name>
    </author>
    <author>
      <name>Saxena, Sneh</name>
    </author>
    <author>
      <name>Gupta, Neeraj</name>
    </author>
    <author>
      <name>Varma, I K</name>
    </author>
    <id>http://nopr.niscpr.res.in/handle/123456789/29762</id>
    <updated>2016-07-20T06:30:01Z</updated>
    <published>1997-12-01T00:00:00Z</published>
    <summary type="text">Title: Carbon fibre/epoxy composites: Effect of epoxy network and surface treatment of fibres on interfacial shear strength
Authors: Varma, D S; Saxena, Sneh; Gupta, Neeraj; Varma, I K
Abstract: &lt;span style="font-size:11.0pt;mso-bidi-font-size:10.0pt;&#xD;
line-height:115%;font-family:" calibri","sans-serif";mso-ascii-theme-font:minor-latin;="" mso-fareast-font-family:"times="" new="" roman";mso-fareast-theme-font:minor-fareast;="" mso-hansi-theme-font:minor-latin;mso-bidi-font-family:"times="" roman";="" mso-ansi-language:en-us;mso-fareast-language:en-us;mso-bidi-language:ar-sa"=""&gt;The&#xD;
paper deals with studies on interfacial shear strength (τ) of carbon fibre&#xD;
composite using single fibre fracture test. Surface modification of desized&#xD;
carbon fibres has been done by argon or oxygen plasma. The effect of network&#xD;
structure on τ has been studied by using difunctional or multifunctional epoxy&#xD;
resins. Interfacial shear strength depends on (i) chemical structure of the&#xD;
epoxy resin (ii) nature of.gas used in plasma generation and (iii) duration of&#xD;
plasma treatment. An increase in cross-link density resulted in a decrease in τ,&#xD;
thereby indicating that a more flexible interface is superior for better adhesion&#xD;
with fibres. Oxygen plasma treated carbon fibres gave highest values of τ.&lt;/span&gt;
Page(s): 266-270</summary>
    <dc:date>1997-12-01T00:00:00Z</dc:date>
  </entry>
</feed>

