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  <title>NOPR Collection:</title>
  <link rel="alternate" href="http://nopr.niscpr.res.in/handle/123456789/8820" />
  <subtitle />
  <id>http://nopr.niscpr.res.in/handle/123456789/8820</id>
  <updated>2026-10-09T18:36:01Z</updated>
  <dc:date>2026-10-09T18:36:01Z</dc:date>
  <entry>
    <title>Effect of facet coatings on laser diode characteristics</title>
    <link rel="alternate" href="http://nopr.niscpr.res.in/handle/123456789/9318" />
    <author>
      <name>Bhore, P V</name>
    </author>
    <author>
      <name>Shah, A P</name>
    </author>
    <author>
      <name>Gokhale, M R</name>
    </author>
    <author>
      <name>Ghosh, S</name>
    </author>
    <author>
      <name>Bhattacharya, A</name>
    </author>
    <author>
      <name>Arora, B M</name>
    </author>
    <id>http://nopr.niscpr.res.in/handle/123456789/9318</id>
    <updated>2010-06-05T16:30:49Z</updated>
    <published>2004-10-01T00:00:00Z</published>
    <summary type="text">Title: Effect of facet coatings on laser diode characteristics
Authors: Bhore, P V; Shah, A P; Gokhale, M R; Ghosh, S; Bhattacharya, A; Arora, B M
Abstract: The cleaved facets&#xD;
of semiconductor diode lasers act like mirror. Mirror coatings are applied to&#xD;
change the reflectivity and passivate the surfaces. Design of antireflection&#xD;
coating is optimized for single layer of Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3 &lt;/sub&gt;and high&#xD;
reflection coating is optimized for stacks of Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3 &lt;/sub&gt;and&#xD;
Si Bragg reflector. Electron beam evaporation has been used to deposit uniform&#xD;
Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/Si film under high vacuum with pressure 10&lt;sup&gt;-6 &lt;/sup&gt;mbar&#xD;
and temperature 150-160°C. The optimization of experimental parameters for the&#xD;
dummy GaAs substrate has been discussed. Using these parameters laser facets&#xD;
were coated and changes in the L-I characteristics have been measured and&#xD;
investigated step by step. The output light power versus current&#xD;
characteristics of coated laser diode is compared with that of uncoated one for&#xD;
its characterization under pulsed conditions and have shown that the facet&#xD;
reflectivity has played a major role in determining threshold current density&#xD;
of semiconductor laser.
Page(s): 438-440</summary>
    <dc:date>2004-10-01T00:00:00Z</dc:date>
  </entry>
  <entry>
    <title>Theoretical approach to the tunneling mechanoluminescence produced during cleavage of II-VI semiconductors</title>
    <link rel="alternate" href="http://nopr.niscpr.res.in/handle/123456789/9317" />
    <author>
      <name>Choudhary, Vibha</name>
    </author>
    <author>
      <name>Singh, Anubha</name>
    </author>
    <author>
      <name>Chandra, V K</name>
    </author>
    <author>
      <name>Gupta, R K</name>
    </author>
    <author>
      <name>Chandra, B P</name>
    </author>
    <id>http://nopr.niscpr.res.in/handle/123456789/9317</id>
    <updated>2010-06-03T16:31:10Z</updated>
    <published>2004-10-01T00:00:00Z</published>
    <summary type="text">Title: Theoretical approach to the tunneling mechanoluminescence produced during cleavage of II-VI semiconductors
Authors: Choudhary, Vibha; Singh, Anubha; Chandra, V K; Gupta, R K; Chandra, B P
Abstract: This paper describes&#xD;
the tunneling mechanoluminescence (ML) produced during fracture of II-VI&#xD;
semiconductors. The electric potential surrounding the charged dislocations&#xD;
bends, valence band and conduction band strongly and consequently, the electron&#xD;
centres float up in synchronism with the band bending as the dislocations core&#xD;
approaches starting distance from the dislocation core the process of electron&#xD;
tunneling from the centre into the conduction band becomes significant. Thus, a&#xD;
moving dislocation can transfer electrons form deep traps to the conduction&#xD;
band. These electrons subsequently recombine with the holes at impurity centres&#xD;
and give rise to luminescence, which is the characteristic of the centres. When&#xD;
a II-VI semiconductor is fractured or cleaved initially the mechanoluminescence&#xD;
(ML) intensity increases with time attains a peak value &lt;i style=""&gt;I&lt;/i&gt;&lt;sub&gt;m&lt;/sub&gt; at the time &lt;i style=""&gt;t&lt;/i&gt;&lt;sub&gt;m&lt;/sub&gt;&#xD;
corresponding to completion of the fracture of semiconductors. After the&#xD;
completion of fracture, the ML intensity decay with time, whereby the initial&#xD;
fast decay is controlled by the pinning time of dislocations and the subsequent&#xD;
slow decay is controlled by the lifetime of electrons in the shallow traps. In&#xD;
the ML produced during the fracture of II-VI semiconductors, both &lt;i style=""&gt;I&lt;/i&gt;&lt;sub&gt;m&lt;/sub&gt; and &lt;i style=""&gt;I&lt;/i&gt;&lt;sub&gt;T&lt;/sub&gt; increase directly with the area of the newly created&#xD;
surfaces of the crystals. The ML intensity of II-VI compounds decreases with&#xD;
temperature. Expressions are derived for the rise of ML intensity, and the&#xD;
total ML intensity. A good agreement is found between the theoretical and&#xD;
experimental results related to the ML produced during the cleavage of II-VI&#xD;
semiconductors.
Page(s): 421-428</summary>
    <dc:date>2004-10-01T00:00:00Z</dc:date>
  </entry>
  <entry>
    <title>Optical and dielectric properties of organic laser dye Rhodamine 6G doped silica xerogels with the variation of the sol-gel parameters</title>
    <link rel="alternate" href="http://nopr.niscpr.res.in/handle/123456789/9316" />
    <author>
      <name>Rao, A Parvathy</name>
    </author>
    <author>
      <name>Rao, A Venkateswara</name>
    </author>
    <id>http://nopr.niscpr.res.in/handle/123456789/9316</id>
    <updated>2010-06-02T16:31:27Z</updated>
    <published>2004-10-01T00:00:00Z</published>
    <summary type="text">Title: Optical and dielectric properties of organic laser dye Rhodamine 6G doped silica xerogels with the variation of the sol-gel parameters
Authors: Rao, A Parvathy; Rao, A Venkateswara
Abstract: The effect of sol-gel parameters&#xD;
such as &lt;i style=""&gt;p&lt;/i&gt;H of the alcosol, R6G/TEOS,&#xD;
H&lt;sub&gt;2&lt;/sub&gt;O/TEOS and EtOH/TEOS molar ratios on the optical and dielectric&#xD;
characteristics of R6G doped silica xerogels are reported here. Optical&#xD;
absorption and emission have been studied in the visible range. The dielectric&#xD;
property such as dielectric permittivity (&lt;img src='/image/spc_char/italics_e.gif' border=0&gt;') is&#xD;
carried out for pure and the R6G doped silica xerogels in the frequency range&#xD;
of the applied field (&lt;i style=""&gt;f&lt;/i&gt;) from 100 Hz&#xD;
to 1 MHz. It has been found that the optical and dielectric properties of the&#xD;
R6G doped silica xerogels are strongly dependent on the sol-gel parameters.&#xD;
Monolithicity and transparency of the R6G doped silica xerogels have also been&#xD;
studied. There is a remarkable shrinkage with the variation of the sol-gel&#xD;
parameters.
Page(s): 413-420</summary>
    <dc:date>2004-10-01T00:00:00Z</dc:date>
  </entry>
  <entry>
    <title>Effect of tyre overload and inflation pressure on rolling loss (resistance) and fuel consumption of automobile and truck/bus tyres</title>
    <link rel="alternate" href="http://nopr.niscpr.res.in/handle/123456789/9315" />
    <author>
      <name>Pillai, Padmanabha S</name>
    </author>
    <id>http://nopr.niscpr.res.in/handle/123456789/9315</id>
    <updated>2010-06-06T16:30:48Z</updated>
    <published>2004-10-01T00:00:00Z</published>
    <summary type="text">Title: Effect of tyre overload and inflation pressure on rolling loss (resistance) and fuel consumption of automobile and truck/bus tyres
Authors: Pillai, Padmanabha S
Abstract: The effect of rolling resistance&#xD;
R on fuel consumption of radial passenger and truck tires is discussed in this&#xD;
paper. The model equation for the rolling loss R was directly proportional to&#xD;
tire load W (R &lt;img src='/image/spc_char/alpha.gif' border=0&gt;  W) and inversely&#xD;
proportional to inflation pressure p (R &lt;img src='/image/spc_char/alpha.gif' border=0&gt; 1/p&lt;sup&gt;x&lt;/sup&gt;).&#xD;
These relationships were experimentally quantified. Using manufacturer’s&#xD;
recommended values for load W and pressure p as reference points the R values&#xD;
for different overload conditions (from +10 to +100%) at constant p were&#xD;
estimated. Similarly, the required p values to support 10 to 50% additional&#xD;
load to maintain original R were also estimated. Then the estimated R values&#xD;
for different overload/inflation pressure conditions were combined with the&#xD;
fuel saving factor F (obtained from published literature results). Then the&#xD;
relative change in fuel consumption of truck/bus tires for different&#xD;
load/pressure combinations vis-a-vis the fuel use for the manufacturer’s&#xD;
recommended W and p values was evaluated. The present analysis showed that for&#xD;
the same amount of fuel use a truck carrying a 100% overload and making one&#xD;
round trip would correspond to slightly more than two round trips by a truck of&#xD;
same size carrying the recommended load. Finally, a possible method of&#xD;
optimizing fuel use by adjusting the tire load/pressure conditions was&#xD;
suggested. All these estimates were obtained for radial tires. The author feels&#xD;
that the same methodology is applicable for bias tires also.
Page(s): 406-412</summary>
    <dc:date>2004-10-01T00:00:00Z</dc:date>
  </entry>
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