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    <title>NOPR Collection:</title>
    <link>http://nopr.niscpr.res.in/handle/123456789/29692</link>
    <description />
    <pubDate>Sat, 10 Oct 2026 13:24:00 GMT</pubDate>
    <dc:date>2026-10-10T13:24:00Z</dc:date>
    <item>
      <title>Study of the interface of ZnSe/GaAs(110) heterostructures</title>
      <link>http://nopr.niscpr.res.in/handle/123456789/29809</link>
      <description>Title: Study of the interface of ZnSe/GaAs(110) heterostructures
Authors: Chaudhari, G N; Manorarna, S V; Rao, V J
Abstract: &lt;span style="font-size:11.0pt;line-height:115%;&#xD;
font-family:" calibri","sans-serif";mso-ascii-theme-font:minor-latin;mso-fareast-font-family:="" "times="" new="" roman";mso-fareast-theme-font:minor-fareast;mso-hansi-theme-font:="" minor-latin;mso-bidi-font-family:"times="" roman";mso-ansi-language:en-us;="" mso-fareast-language:en-us;mso-bidi-language:ar-sa"=""&gt;The different phases formed&#xD;
at the ZnSe/GaAs interface and Schottky barrier height have been studied by low&#xD;
angle X-ray diffraction, current-voltage and capacitance-voltage&#xD;
characteristics. It has been shown that three phases namely Ga&lt;sub&gt;2&lt;/sub&gt;Se&lt;sub&gt;3&lt;/sub&gt;,&#xD;
As&lt;sub&gt;2&lt;/sub&gt;Se&lt;sub&gt;3 &lt;/sub&gt;and Zn&lt;sub&gt;3&lt;/sub&gt;As&lt;sub&gt;2&lt;/sub&gt; are formed after&#xD;
annealing the ZnSe films on GaAs at different temperatures. The diode&#xD;
characteristics improved significantly and the barrier height is found to increase&#xD;
with increasing annealing temperature.&lt;/span&gt;
Page(s): 215-218</description>
      <pubDate>Tue, 01 Oct 1996 00:00:00 GMT</pubDate>
      <guid isPermaLink="false">http://nopr.niscpr.res.in/handle/123456789/29809</guid>
      <dc:date>1996-10-01T00:00:00Z</dc:date>
    </item>
    <item>
      <title>Structural modelling of fractals towards electrochemical surface technology</title>
      <link>http://nopr.niscpr.res.in/handle/123456789/29808</link>
      <description>Title: Structural modelling of fractals towards electrochemical surface technology
Authors: Bhatt, Devendra P; BahI, O P; Schumacher, R; Meyer, H
Abstract: &lt;span style="font-size:11.0pt;line-height:115%;&#xD;
font-family:" calibri","sans-serif";mso-ascii-theme-font:minor-latin;mso-fareast-font-family:="" "times="" new="" roman";mso-fareast-theme-font:minor-fareast;mso-hansi-theme-font:="" minor-latin;mso-bidi-font-family:"times="" roman";mso-ansi-language:en-us;="" mso-fareast-language:en-us;mso-bidi-language:ar-sa"=""&gt;The fractal geometry has&#xD;
been considered as a powerful tool to characterize the metal solution interface&#xD;
in terms of the surface roughness besides having its widely published, utility&#xD;
in Chemistry and Physics. This paper describes the brief account on the&#xD;
generation of the Mandelbrot Apple-tree sets with an emphasis on deterministic&#xD;
and stochastic fractals and also would concentrate on the build-up of impedance&#xD;
diagrams of different complex equivalent circuits by viewing the surface&#xD;
through fractal patterns. A general simulation programme for the calculation of&#xD;
Nyquist plots with respect to fractal electrode-electrolyte interface has been&#xD;
developed and the implications of this model for electrochemical surface&#xD;
technology are discussed.&lt;/span&gt;
Page(s): 207-214</description>
      <pubDate>Tue, 01 Oct 1996 00:00:00 GMT</pubDate>
      <guid isPermaLink="false">http://nopr.niscpr.res.in/handle/123456789/29808</guid>
      <dc:date>1996-10-01T00:00:00Z</dc:date>
    </item>
    <item>
      <title>Rechargeable organic batteries based on charge-transfer materials-II: Compositional dependence and charge-discharge characteristics of aromatic diamine-iodine systems</title>
      <link>http://nopr.niscpr.res.in/handle/123456789/29807</link>
      <description>Title: Rechargeable organic batteries based on charge-transfer materials-II: Compositional dependence and charge-discharge characteristics of aromatic diamine-iodine systems
Authors: Singh, V K; Rao, O S; Singh, R A
Abstract: &lt;span style="font-size:11.0pt;line-height:115%;&#xD;
font-family:" calibri","sans-serif";mso-ascii-theme-font:minor-latin;mso-fareast-font-family:="" "times="" new="" roman";mso-fareast-theme-font:minor-fareast;mso-hansi-theme-font:="" minor-latin;mso-bidi-font-family:"times="" roman";mso-ansi-language:en-us;="" mso-fareast-language:en-us;mso-bidi-language:ar-sa"=""&gt;The compositional and&#xD;
temperature dependence of various electrochemical parameters such as open-circuit&#xD;
voltage &lt;span style="font-size:11.0pt;line-height:115%;font-family:" calibri","sans-serif";="" mso-ascii-theme-font:minor-latin;mso-fareast-font-family:"times="" new="" roman";="" mso-fareast-theme-font:minor-fareast;mso-hansi-theme-font:minor-latin;="" mso-bidi-font-family:arial;mso-ansi-language:en-us;mso-fareast-language:en-us;="" mso-bidi-language:ar-sa;mso-bidi-font-style:italic"=""&gt;(&lt;i&gt;V&lt;/i&gt;&lt;sub&gt;oc&lt;/sub&gt;), &lt;span style="font-size:11.0pt;line-height:115%;font-family:" calibri","sans-serif";="" mso-ascii-theme-font:minor-latin;mso-fareast-font-family:"times="" new="" roman";="" mso-fareast-theme-font:minor-fareast;mso-hansi-theme-font:minor-latin;="" mso-bidi-font-family:"times="" roman";mso-ansi-language:en-us;mso-fareast-language:="" en-us;mso-bidi-language:ar-sa"=""&gt;short-circuit current (&lt;i style="mso-bidi-font-style:&#xD;
normal"&gt;I&lt;/i&gt;&lt;sub&gt;sc&lt;/sub&gt;) dielectric constants (ϵ) and loss factor &lt;i&gt;&lt;span style="font-size:11.0pt;line-height:115%;font-family:" calibri","sans-serif";="" mso-ascii-theme-font:minor-latin;mso-fareast-font-family:"times="" new="" roman";="" mso-fareast-theme-font:minor-fareast;mso-hansi-theme-font:minor-latin;="" mso-bidi-font-family:arial;mso-ansi-language:en-us;mso-fareast-language:en-us;="" mso-bidi-language:ar-sa"=""&gt;(D) &lt;/span&gt;&lt;/i&gt;&lt;span style="font-size:11.0pt;&#xD;
line-height:115%;font-family:" calibri","sans-serif";mso-ascii-theme-font:minor-latin;="" mso-fareast-font-family:"times="" new="" roman";mso-fareast-theme-font:minor-fareast;="" mso-hansi-theme-font:minor-latin;mso-bidi-font-family:"times="" roman";="" mso-ansi-language:en-us;mso-fareast-language:en-us;mso-bidi-language:ar-sa"=""&gt;have&#xD;
been determined for different solid state galvanic cells based on zinc as the&#xD;
anode metal, charge-transfer complexes of benzidine (Bz.) and &lt;i style="mso-bidi-font-style:normal"&gt;o&lt;/i&gt;-tolidine (&lt;i style="mso-bidi-font-style:&#xD;
normal"&gt;o&lt;/i&gt;-TOL.) with iodine in different mole ratios acting as cathode and&#xD;
graphite or platinum as counter electrodes. The exponential decrease in&#xD;
electrical conductivity of these samples with time indicates that these&#xD;
materials are mixed ionic-electronic conductors which can be directly used for&#xD;
the rechargeable organic batteries. The charge-discharge characteristics of&#xD;
these electrochemical cells have been studied and possible explanations have&#xD;
been given.&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;
Page(s): 201-206</description>
      <pubDate>Tue, 01 Oct 1996 00:00:00 GMT</pubDate>
      <guid isPermaLink="false">http://nopr.niscpr.res.in/handle/123456789/29807</guid>
      <dc:date>1996-10-01T00:00:00Z</dc:date>
    </item>
    <item>
      <title>End-capping and other defects in pressed ceramic compacts</title>
      <link>http://nopr.niscpr.res.in/handle/123456789/29806</link>
      <description>Title: End-capping and other defects in pressed ceramic compacts
Authors: Balakrishna, P; Chakraborthy, K P; Singh, Ajit
Abstract: &lt;span style="font-size:11.0pt;line-height:115%;&#xD;
font-family:" calibri","sans-serif";mso-ascii-theme-font:minor-latin;mso-fareast-font-family:="" "times="" new="" roman";mso-fareast-theme-font:minor-fareast;mso-hansi-theme-font:="" minor-latin;mso-bidi-font-family:"times="" roman";mso-ansi-language:en-us;="" mso-fareast-language:en-us;mso-bidi-language:ar-sa"=""&gt;End-capping defect is one&#xD;
of the causes of rejection in pressed and sintered ceramic compacts. The causes&#xD;
of its occurrence lie both in the quality of the powder and that of pressing.&#xD;
In this paper, end-capping and other defects have been described and their&#xD;
relationship to powder characteristics and pressing parameters has been brought&#xD;
out. It is found that soft powders that are free from agglomerates, and well&#xD;
finished suitably tapered hard material dies and moderate compaction pressures&#xD;
tend to minimize end-capping and other defects.&lt;/span&gt;
Page(s): 196-200</description>
      <pubDate>Tue, 01 Oct 1996 00:00:00 GMT</pubDate>
      <guid isPermaLink="false">http://nopr.niscpr.res.in/handle/123456789/29806</guid>
      <dc:date>1996-10-01T00:00:00Z</dc:date>
    </item>
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