<?xml version="1.0" encoding="UTF-8"?>
<rss xmlns:dc="http://purl.org/dc/elements/1.1/" version="2.0">
  <channel>
    <title>NOPR Collection:</title>
    <link>http://nopr.niscpr.res.in/handle/123456789/8747</link>
    <description />
    <pubDate>Mon, 05 Oct 2026 11:53:52 GMT</pubDate>
    <dc:date>2026-10-05T11:53:52Z</dc:date>
    <item>
      <title>Segregation behaviour of trace metal impurities during ultra high purification of gallium by zone refining</title>
      <link>http://nopr.niscpr.res.in/handle/123456789/30625</link>
      <description>Title: Segregation behaviour of trace metal impurities during ultra high purification of gallium by zone refining
Authors: Rambabu, U; Munirathnam, N R; Reddy, R C; Prakash, T L
Abstract: &lt;span style="mso-bidi-language:HI"&gt;The details of an in-house fabricated laboratory&#xD;
scale horizontal zone-refiner (HZR) for the purification of indigenous 4N&#xD;
(99.99%) gallium have been reported. The purified gallium ingot was analyzed&#xD;
for its selected trace metal impurity&#xD;
&#xD;
&lt;span style="mso-bidi-language:HI"&gt;elements, namely Zn, Pb, Cu, AI, Cr, Ni, Fe, B and&#xD;
Mn using inductively coupled plasma optical emission spectrophotometer&#xD;
(ICP-OES). Segregation behaviour of the trace metal impurities throughout the&#xD;
ingot have been illustrated. The repeated experimental results confirm 6N&#xD;
(99.9999%) purity gallium.&#xD;
&#xD;
&lt;/span&gt;&lt;/span&gt;
Page(s): 783-786</description>
      <pubDate>Sat, 01 Oct 2005 00:00:00 GMT</pubDate>
      <guid isPermaLink="false">http://nopr.niscpr.res.in/handle/123456789/30625</guid>
      <dc:date>2005-10-01T00:00:00Z</dc:date>
    </item>
    <item>
      <title>Effect of charge bump on the series resistance and microwave properties of Si &lt;i style=""&gt;n&lt;/i&gt;&lt;sup&gt;+&lt;/sup&gt;&lt;i style=""&gt;np&lt;/i&gt;&lt;sup&gt;+&lt;/sup&gt; IMPATT diode at X-band</title>
      <link>http://nopr.niscpr.res.in/handle/123456789/8875</link>
      <description>Title: Effect of charge bump on the series resistance and microwave properties of Si &lt;i style=""&gt;n&lt;/i&gt;&lt;sup&gt;+&lt;/sup&gt;&lt;i style=""&gt;np&lt;/i&gt;&lt;sup&gt;+&lt;/sup&gt; IMPATT diode at X-band
Authors: De, P
Abstract: The value of series&#xD;
resistance (&lt;i style=""&gt;R&lt;/i&gt;&lt;sub&gt;s&lt;/sub&gt;) of Si &lt;i style=""&gt;n&lt;/i&gt;&lt;sup&gt;+&lt;/sup&gt;&lt;i style=""&gt;np&lt;/i&gt;&lt;sup&gt;+&lt;/sup&gt; IMPATT diode has been studied through computer&#xD;
simulation considering experimental bias current and frequency in the X-band,&#xD;
and the results fit well with the device data (1.6 Ω at 10 GHz) for the flat doping profile. It is further observed that&#xD;
the value of &lt;i style=""&gt;R&lt;/i&gt;&lt;sub&gt;s&lt;/sub&gt; decreases&#xD;
from 1.76 to 0.1128 Ω at 10.7&#xD;
GHz under experimental current density (3.45&lt;img src='/image/spc_char/cross.gif' border=0&gt;10&lt;sup&gt;6&lt;/sup&gt; A.m&lt;sup&gt;-2&lt;/sup&gt;) and temperature (373K), as the doping profile changes from flat to&#xD;
low-high-low(lhl) type with the incorporation of charge bump. The electric&#xD;
field and the negative resistivity profiles in the depletion layer clearly&#xD;
indicate the advantage of lhl doping profile on the series resistance as well&#xD;
as on its microwave properties. The analysis also gives an idea on the unison&#xD;
of load conductance of the waveguide and negative conductance of the diode at&#xD;
resonance.
Page(s): 794-798</description>
      <pubDate>Sat, 01 Oct 2005 00:00:00 GMT</pubDate>
      <guid isPermaLink="false">http://nopr.niscpr.res.in/handle/123456789/8875</guid>
      <dc:date>2005-10-01T00:00:00Z</dc:date>
    </item>
    <item>
      <title>Ultrasonic study of 1-butanol in pyridine with benzene</title>
      <link>http://nopr.niscpr.res.in/handle/123456789/8874</link>
      <description>Title: Ultrasonic study of 1-butanol in pyridine with benzene
Authors: Arul, G; Palaniappan, L
Abstract: Sound velocity,&#xD;
density and viscosity have been measured in the ternary mixtures of 1-butanol&#xD;
in pyridine with benzene at 303K. Some of the acoustical parameters such as&#xD;
adiabatic compressibility, free length, free volume and internal pressure are&#xD;
calculated from the measured data using the standard relations. The trend shown&#xD;
by the excess parameters of free volume and internal pressure is peculiar that&#xD;
both are negative and in increasing order confirms that the associative nature&#xD;
of alcohol disturbs the molecular symmetry available in benzene molecule. The&#xD;
reduction in the cohesion of dipolar pyridine is also noticed.
Page(s): 755-758</description>
      <pubDate>Sat, 01 Oct 2005 00:00:00 GMT</pubDate>
      <guid isPermaLink="false">http://nopr.niscpr.res.in/handle/123456789/8874</guid>
      <dc:date>2005-10-01T00:00:00Z</dc:date>
    </item>
    <item>
      <title>Study of impedance spectroscopy conducting polymer prepared with the use of water soluble support polymer</title>
      <link>http://nopr.niscpr.res.in/handle/123456789/8873</link>
      <description>Title: Study of impedance spectroscopy conducting polymer prepared with the use of water soluble support polymer
Authors: Ray, D K; Himanshu, A K; Sinha, T P
Abstract: The intrinsically&#xD;
conducting polymer (ICP), polyaniline (PANI) is synthesized by chemical&#xD;
oxidative polymerization process with the help of water soluble support polymer&#xD;
poly-vinyl alcohol (PVA). The field dependence of the dielectric response is&#xD;
measured in the frequency range 50 Hz-1 MHz and temperature range 140-318 K.&#xD;
The frequency dependence of the imaginary impedance (Z'') is found to obey an Arrhenius law with the activation energy of&#xD;
0.0176 eV. An analysis of real and imaginary parts of dielectric permittivity,&#xD;
conductivity formalism and impedance (Z) with frequency and temperature is&#xD;
performed, showing the polydispersive nature of the sample as confirmed by&#xD;
Cole-Cole plot as well as the scaling behaviour of the Z''. The frequency dependent electrical data are discussed in the&#xD;
context of models for &lt;i style=""&gt;dc&lt;/i&gt; and &lt;i style=""&gt;ac&lt;/i&gt; transport in PANI-PVA composite, with&#xD;
the results supporting hopping of charges among positively charged polaron and&#xD;
bipolaron states. These results elucidate that there is an increased coupling&#xD;
among the local dipolar motions (short-range order localized motion).
Page(s): 787-793</description>
      <pubDate>Sat, 01 Oct 2005 00:00:00 GMT</pubDate>
      <guid isPermaLink="false">http://nopr.niscpr.res.in/handle/123456789/8873</guid>
      <dc:date>2005-10-01T00:00:00Z</dc:date>
    </item>
  </channel>
</rss>

