Space charge limited current in Schottky diode with single level traps

Abstract

The space charge limited current (SCLC) in a Schottky diode with a finite injection barrier at the injecting contact and single level traps in the energy space has been investigated by mathematical modelling. Solution of coupled Poisson’s and continuity equations with non-zero Schottky barrier (<img src='http://www.niscair.res.in/jinfo/phi.gif' border=0>) leaded us to calculate the electric field [<i>F</i>(<i>x</i>)] and the charge carrier <i style="">p</i>(<i style="">x</i>) distribution in the sample. Considering the boundary conditions, the current density-voltage (<i style="">J-V</i>) characteristics have been calculated numerically. It is reported here that when Schottky barrier is not zero, <i style="">J-V</i> characteristics become Ohmic at infinitely large voltages. The expression of trap filled limit voltage (<i style="">V_TFL</i>) has also been derived. The effect of Schottky barrier on the SCLC current in semiconducting devices has been studied in the present paper.