Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/12754
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dc.contributor.authorPandit, Premlata-
dc.contributor.authorSanyal, Sankar P-
dc.date.accessioned2011-09-27T10:20:31Z-
dc.date.available2011-09-27T10:20:31Z-
dc.date.issued2011-10-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/12754-
dc.description692-697en_US
dc.description.abstractFirst principles pseudopotential method based on density functional theory is used to investigate the structural, electronic, elastic and phonon properties of Mg2X (X=Si, Ge, Sn) compounds at ambient pressure in antifluorite (anti-CaF2-type) structure. The calculated lattice parameters, static bulk modulus, its first order pressure derivatives and the elastic constants are compared with available experimental and other theoretical results. All the compounds have shown very small indirect band gap. The linear response method is applied to determine the phonon dispersion relations and phonon density of states. The phonon frequencies of these compounds are compared with Raman frequency to reveal small LO-TO splitting at zone center.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.49(10) [October 2011]en_US
dc.subjectSemiconductoren_US
dc.subjectElectronic band structureen_US
dc.subjectPhononen_US
dc.subjectMechanical propertiesen_US
dc.titleFirst principles study of electronic, elastic and lattice dynamical properties of Mg2X (X= Si, Ge and Sn) compoundsen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.49(10) [October 2011]

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