Effect of process conditions on microstructure and performance of thermally evaporated InSb thin films

Abstract

Technologically important Indium Antimonide (InSb) thin films have been grown on different substrates (NaCl, KCl, KBr, quartz and glass) maintained at varied temperatures (300, 373, 473, 623 and 703 K) using a thermal evaporation technique under vacuum (~10-3 Pa). These films have been prepared by utilizing a single phase stoichiometric InSb compound produced by vertical directional solidification (VDS) technique. Scanning and transmission electron microscopy (SEM & TEM), X-ray diffraction (XRD), fourier transform infrared spectrometry (FTIR) and electrical resistivity measurements are the important characterization methods used for analyzing these films deposited under different process conditions. The conditions have been determined to deposit good quality epitaxial films of InSb. The effect of the type of substrate and its temperature on the quality of thin films in terms of their structure and microstructure and different properties has been evaluated.