Role of semiconducting oxide (CuO) and <img src='/image/spc_char/gamma2.gif' border=0>-irradiation on the thermal decomposition of <span style="font-size:12.0pt;font-family:"Times New Roman","serif";mso-fareast-font-family: Calibri;mso-fareast-theme-font:minor-latin;mso-ansi-language:EN-IN;mso-fareast-language: EN-US;mso-bidi-language:AR-SA">barium oxalate</span>

Abstract

Influence of the semiconducting oxide, CuO, (1.0-10.0 mol%) and <img src='/image/spc_char/gamma2.gif' border=0>-irradiation (0.5<i>-</i>5.0<i>×</i>102 KGy) on the thermal decomposition of barium oxalate has been studied by the gas evolution method. The process occurs through initial gas evolution followed by a sigmoidal zone consisting of acceleratory and decay periods. Lower concentrations of the additive reduce the value of fraction decomposed, <img src='/image/spc_char/alpha.gif' border=0> , and decrease the rate of reaction in the acceleratory and decay stages, the effect being more prominent in the case of former. However, reaction rate

<span style="font-size:12.0pt;font-family:" times="" new="" roman","serif";mso-fareast-font-family:="" calibri;mso-fareast-theme-font:minor-latin;mso-ansi-language:en-in;mso-fareast-language:="" en-us;mso-bidi-language:ar-sa"="">increases with increasing concentration of the additive. The extent as well as the rate of decomposition in the acceleratory stage is facilitated on irradiation but the reverse takes place in the decay period, the effect being higher at higher doses.</span></span></span></span></span></span>