Photoelectrochemical studies on thermally treated (ZnCd) Se films

Abstract

<span style="font-size:14.0pt;line-height: 115%;font-family:" times="" new="" roman";mso-fareast-font-family:"times="" roman";="" color:black;mso-ansi-language:en-in;mso-fareast-language:en-in;mso-bidi-language:="" hi"="" lang="EN-IN">Photoresponsive mixed metal chalcogenide films of (ZnCd) Se of desired composition have been prepared by electrochemical codeposition and subjected to thermal treatment at 400°C in argon atmosphere under controlled conditions. Photoresponsiveness of thermally treated electrodes has been examined employing Ѓ₃ / I₂redox system and characterised by photoaction spectral (PAS) studies and impedance measurements. Thermal treatment of the electrodeposits is accompanied by inversion from <i>p</i>-to <i>n</i>-type semiconductivity and they exhibit somewhat lowered band gap perhaps due to recrystallisation. The thermally treated preparations have been endowed with increased stability and somewhat improved photoresponsiveness and they exhibit increased resistance towards impairment due to electrochemical corrosion.</span>