Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/18399
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dc.contributor.authorHan, Sang-Do-
dc.contributor.authorSingh, Ishwar-
dc.contributor.authorKim, Han-Soo-
dc.contributor.authorKim, Sun -Tae-
dc.contributor.authorJung, Young-Ho-
dc.contributor.authorKim, Byeong-Kwon-
dc.date.accessioned2013-05-27T08:27:20Z-
dc.date.available2013-05-27T08:27:20Z-
dc.date.issued2002-09-
dc.identifier.issn0975-0975(Online); 0376-4710(Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/18399-
dc.description1832-1836en_US
dc.description.abstractThe WO3 thick-films fabricated as gas sensor exhibit good sensitivity for H2S over a wide range of operation temperatures.The sensor characteristics are influenced with the microstructure and the thickness of the WO3 films. The sensitivity of the sensor decreases with increase in thickness of the films. Re lative variation of the fabricated sensor's resistance at varying temperatures between 240° and 420°C with heater power and with varying concentrations of the H2S gas under analysis have been derived. The best results for sensing H2S gas in the concentration range between 0.05 and 25 ppm have been obtained when the film thickness is kept between 20 -22 μm . The response of WO3 films for sensing H2S gas is not influenced by the presence of several testing reference gases like SO2 up to 12 ppm, NH3 up to 10.8 ppm, CO up to 19 ppm and CH4 up to 187 ppm. However, presence of NO, interferes when present in ambient air. Addition of small amounts of SO2 (3-10%), however, corrects the result and H2S can be determined in the presence of NOx up to 11 ppm.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJC-A Vol.41A(09) [September 2002]en_US
dc.titleH2S gas sensing characteristics of WO3 thick-filmsen_US
dc.typeArticleen_US
Appears in Collections:IJC-A Vol.41A(09) [September 2002]

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