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http://nopr.niscpr.res.in/handle/123456789/19051| Title: | Opto-electric properties of Ti doping GZO thin film by different annealing temperatures |
| Authors: | Chen, Tao-Hsing Liao, Tzu-Yu |
| Keywords: | Ti:GZO transparent conductive oxide thin film;RTA;XRD |
| Issue Date: | Jun-2013 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | This study uses radio frequency magnetron sputtering (RF-sputtering) to deposit Ti: GZO transparent conductive film on the corning glass substrate, then treats Ti/GZO thin film with rapid thermal annealing (RTA) process. The annealing temperatures set as 300°C, 500°C and 550°C, respectively. Furthermore, the effects of process parameters on electrical resistivity and optical characteristic are examined. The deposited rate, microstructure, thickness and optical transmission of Ti:GZO thin film are investigated. The results show that the optical transmittance of Ti:GZO thin film exhibited an excellent transparency in the visible light field. Moreover, the resistivity of Ti:GZO decreases with increase in annealing temperature. |
| Page(s): | 205-208 |
| ISSN: | 0975-1017 (Online); 0971-4588 (Print) |
| Appears in Collections: | IJEMS Vol.20(3) [June 2013] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 20(3) 205-208.pdf | 228.16 kB | Adobe PDF | View/Open |
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