Please use this identifier to cite or link to this item:
http://nopr.niscpr.res.in/handle/123456789/194Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Mangal, R K | - |
| dc.contributor.author | Vijay, Y K | - |
| dc.contributor.author | Avasthi, D K | - |
| dc.contributor.author | Shekhar, B R | - |
| dc.date.accessioned | 2008-02-28T10:27:29Z | - |
| dc.date.available | 2008-02-28T10:27:29Z | - |
| dc.date.issued | 2007-06 | - |
| dc.identifier.issn | 0971-4588 | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/194 | - |
| dc.description | 253-256 | en_US |
| dc.description.abstract | Thin films having constant thickness of indium over varying thickness of antimony are deposited on glass substrates using vacuum evaporation method. Films are irradiated by Ag¹²⁺ heavy ions of energy 160 MeV at the fluence 2.2×10¹³ ons/cm². The optical absorption spectra have been recorded at room temperature of as-deposited and Ag¹²⁺ ion beam irradiated samples which show mixing of In/Sb bilayer. Rutherford back scattering (RBS) spectra also carried out using ⍺-particles of energy 3 MeV. The optical band gap data of irradiated films found in the range of In/Sb semiconductor. RBS spectra also support mixing of bilayer. These results show mixing of In/Sb bilayer by swift heavy ion beam irradiation processes. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | CSIR | en_US |
| dc.relation.ispartofseries | H01C17/075 | en_US |
| dc.source | IJEMS Vol.14(3) [June 2007] | en_US |
| dc.title | Rutherford back scattering and optical band gap of In/Sb thin films | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJEMS Vol.14(3) [June 2007] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 14(3) (2007) 253-256.pdf | 237.77 kB | Adobe PDF | View/Open |
Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.