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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Prameela, Ch | - |
| dc.contributor.author | Anjaiah, M | - |
| dc.contributor.author | Murthy, K Krishna | - |
| dc.contributor.author | Srinivasarao, K | - |
| dc.date.accessioned | 2013-07-19T09:11:09Z | - |
| dc.date.available | 2013-07-19T09:11:09Z | - |
| dc.date.issued | 2013-08 | - |
| dc.identifier.issn | 0975-1041 (Online); 0019-5596 (Print) | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/19925 | - |
| dc.description | 563-568 | en_US |
| dc.description.abstract | Thin films of V2O5, MoO3 and (V2O5)1-x-(MoO3)x were deposited on to glass and p-Si (1 0 0) substrates by flash evaporation technique at the substrate temperatures of 300 K and 500 K at a fixed oxygen partial pressure of 5´10-4 mbar. These deposited films were characterized by XRD, IR, UV VIS spectra. The structure of (V2O5)1-x-(MoO3)x films is found to be amorphous for x= 0.5. The IR spectra confirm the formation of (V2O5)1-x-(MoO3)x mixed oxide films for 0<x<1. The energy gaps of the mixed oxide films are in between 2.1 to 2.56 eV. The width of localized states is 0.92 eV (for x=0). The electrical conductivity of the V2O5 films is 2´10-3 ohm-1 cm-1 and decreases with increasing the MoO3 concentration in (V2O5)1-x-(MoO3)x thin films. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights | CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJPAP Vol.51(08) [August 2013] | en_US |
| dc.subject | Mixed oxide thin films | en_US |
| dc.subject | Flash evaporation | en_US |
| dc.subject | Characterization | en_US |
| dc.title | Structural, optical and electrical properties of (V2O5)1-x-(MoO3)x thin films | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJPAP Vol.51(08) [August 2013] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 51(8) 563-568.pdf | 152.08 kB | Adobe PDF | View/Open |
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