Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/19925
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dc.contributor.authorPrameela, Ch-
dc.contributor.authorAnjaiah, M-
dc.contributor.authorMurthy, K Krishna-
dc.contributor.authorSrinivasarao, K-
dc.date.accessioned2013-07-19T09:11:09Z-
dc.date.available2013-07-19T09:11:09Z-
dc.date.issued2013-08-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/19925-
dc.description563-568en_US
dc.description.abstractThin films of V2O5, MoO3 and (V2O5)1-x-(MoO3)x were deposited on to glass and p-Si (1 0 0) substrates by flash evaporation technique at the substrate temperatures of 300 K and 500 K at a fixed oxygen partial pressure of 5´10-4 mbar. These deposited films were characterized by XRD, IR, UV VIS spectra. The structure of (V2O5)1-x-(MoO3)x films is found to be amorphous for x= 0.5. The IR spectra confirm the formation of (V2O5)1-x-(MoO3)x mixed oxide films for 0<x<1. The energy gaps of the mixed oxide films are in between 2.1 to 2.56 eV. The width of localized states is 0.92 eV (for x=0). The electrical conductivity of the V2O5 films is 2´10-3 ohm-1 cm-1 and decreases with increasing the MoO3 concentration in (V2O5)1-x-(MoO3)x thin films. en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.51(08) [August 2013]en_US
dc.subjectMixed oxide thin filmsen_US
dc.subjectFlash evaporationen_US
dc.subjectCharacterizationen_US
dc.titleStructural, optical and electrical properties of (V2O5)1-x-(MoO3)x thin filmsen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.51(08) [August 2013]

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