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http://nopr.niscpr.res.in/handle/123456789/19927| Title: | X-ray soft annealing process study for p-n junction diode |
| Authors: | Rujanapich, Poopol Poyai, Amporn Srithanachai, Itsara Ueamanapong, Surada Titiroongruang, Wisut |
| Keywords: | X-ray annealing;p-n junction diode |
| Issue Date: | Aug-2013 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | The effect of X-ray soft annealing on the electrical properties of p–n junction diodes has been investigated. Under a forward bias of 1.0 V at 303 K, the forward current is approximately two orders of magnitude higher for X-ray annealed than for non-X-ray annealed samples. This effect is further investigated by evaluating the following properties under forward-bias conditions: ideality factor, saturation current, activation energy, series resistance, under reverse-bias conditions, carrier-generation lifetime, and activation energy. Results suggest that X-ray soft annealing improves the electrical properties of p-n junction diodes under forward-bias conditions. |
| Page(s): | 587-592 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Appears in Collections: | IJPAP Vol.51(08) [August 2013] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 51(8) 587-592.pdf | 323.18 kB | Adobe PDF | View/Open |
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