Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/24190
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dc.contributor.authorSubramanyam, T K-
dc.contributor.authorRao, G Venkata-
dc.contributor.authorReddy, K T Ramakrishna-
dc.contributor.authorUthanna, S-
dc.date.accessioned2013-11-26T05:22:43Z-
dc.date.available2013-11-26T05:22:43Z-
dc.date.issued2003-04-
dc.identifier.issn0975-1017 (Online); 0971-4588 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/24190-
dc.description151-154en_US
dc.description.abstractPolycrystalline thin films of cadmium oxide were prepared using dc magnetron sputtering technique by sputtering of metallic cadmium target in the mixture of argon and oxygen atmosphere under various sputtering pressures in the range 3×10-2 - 1×10-1 mbar. The variation of deposition rate of the films with the sputtering pressure was in correlation with the variation of cathode potential. The influence of sputtering pressure on the structural, electrical and optical properties of CdO films was systematically studied. The electrical resistivity of the films increased from 5.6×10-4 to 1.5×10-3 Ωcm and the optical band gap increased form 2.45 to 2.53 eV with the increase of sputtering pressure from 3×10-2 to 1×10-1 mbar respectively.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJEMS Vol.10(2) [April 2003]en_US
dc.titleEffect of sputtering pressure on the physical properties of dc magnetron sputtered cadmium oxide filmsen_US
dc.typeArticleen_US
Appears in Collections:IJEMS Vol.10(2) [April 2003]

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