<span style="font-size:12.0pt;line-height: 115%;font-family:"Times New Roman","serif";mso-fareast-font-family:"Times New Roman"; mso-ansi-language:EN-IN;mso-fareast-language:EN-IN;mso-bidi-language:HI" lang="EN-IN">Electrcial conduction in chemically deposited CdSe_1-xTe_x mixed/alloyed thin films</span>

Abstract

CdSe_1-xTe_x films are crystalline in nature over the whole range of composition with a predominant wurzite structure. The compositional analysis showed that in Cd-rich films compared to Te content, Se content in the films is slightly greater for each of the compositions. The surface morphology showed diffused grained polycrysalline texture with overgrowth developed in some cases. The temperature dependences of electrical conductivity, thermoelectric power, carrier concentration and mobility are examined and the influence of the Te-concentration on them is investigated and explained in terms of Petritz grain boundary scattering limited model. The dc electrical conductivity is found to decrease with an increase in <i>x </i>up to 0.08 and thereafter increased continuously as <i>x </i>was increased. The results indicated that the electrical transport properties of chemically deposited Cd (Se, Te) films are governed by the intergrain barrier potential, which is sensitively dependent on the Te-concentration in the CdSe films.