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http://nopr.niscpr.res.in/handle/123456789/24358Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Rao, K Srinivasa | - |
| dc.contributor.author | Madhuri, K V | - |
| dc.contributor.author | Uthanna, S | - |
| dc.contributor.author | Naidu, B S | - |
| dc.contributor.author | Hussain, O M | - |
| dc.date.accessioned | 2013-11-29T09:24:55Z | - |
| dc.date.available | 2013-11-29T09:24:55Z | - |
| dc.date.issued | 2001-06 | - |
| dc.identifier.issn | 0975-1017 (Online); 0971-4588 (Print) | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/24358 | - |
| dc.description | 177-181 | en_US |
| dc.description.abstract | DC conductivity of thin films of MoO3, prepared by activated reactive evaporation technique, revealed electron hopping conduction at lower temperature and the intrinsic thermally activated process at higher temperature. The dielectric properties of Al/MoO3/Al thin film sandwich structures were studied in the frequency range 0.050-100 kHz and in the temperature range 80-400 K. The frequency and temperature dependences of capacitance and dielectric loss were also studied. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights |  CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJEMS Vol.08(3) [June 2001] | en_US |
| dc.title | Electrical properties of MoO3 films | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJEMS Vol.08(3) [June 2001] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 8(3) 177-181.pdf | 1.06 MB | Adobe PDF | View/Open |
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