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http://nopr.niscpr.res.in/handle/123456789/24390Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Singh, Virendra | - |
| dc.contributor.author | Singh, Beer Pal | - |
| dc.contributor.author | Kumar, Vinod | - |
| dc.contributor.author | Sharma, T P | - |
| dc.contributor.author | Tyagi, R C | - |
| dc.date.accessioned | 2013-12-02T08:50:13Z | - |
| dc.date.available | 2013-12-02T08:50:13Z | - |
| dc.date.issued | 2000-04 | - |
| dc.identifier.issn | 0975-1017 (Online); 0971-4588 (Print) | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/24390 | - |
| dc.description | 100-102 | en_US |
| dc.description.abstract | Thin films of cadmium sulphide (CdS) have been deposited in a low atmosphere of H2S obtained by thermal decomposition of thiourea inside the vacuum chamber. The substrate is kept at an elevated temperature to eject any sulphur atoms deposited due to thermal decomposition of CdS during evaporation. The cadmium ions would promptly recombine with the H2S to give better stoichiometry of the films. This results in better growth of films which are more uniform, more adherent, pin holes free and have better crystallity as have been inferred by the sharpness of the absorption spectra. Such films are inherently better suited for device fabrication. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights |  CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJEMS Vol.07(2) [April 2000] | en_US |
| dc.title | Band gap of vacuum evaporated CdS thin films | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJEMS Vol.07(2) [April 2000] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 7(2) 100-102.pdf | 416.36 kB | Adobe PDF | View/Open |
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