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http://nopr.niscpr.res.in/handle/123456789/24413Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Roy, M S | - |
| dc.contributor.author | Jaiswal, Pratibha | - |
| dc.contributor.author | Manmeeta | - |
| dc.contributor.author | Saxena, Dhiraj | - |
| dc.contributor.author | Sharma, G D | - |
| dc.date.accessioned | 2013-12-03T04:54:08Z | - |
| dc.date.available | 2013-12-03T04:54:08Z | - |
| dc.date.issued | 2000-10 | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/24413 | - |
| dc.description | 282-286 | en_US |
| dc.description.abstract | Electrical, impedance and photovoltaic measurements with a thin film of PMB doped PPy and undoped PPy , using sandwich between Ag and ITO are explained in terms of p-type semiconducting behaviour of PMB doped-PPy (PMB:PPy) film and by the formation of Schottky barrier with Ag and ohmic contact with ITO. At low voltage region Ohm's law is followed, while at high voltage region a space charge limited conduction is observed which is controlled by the exponential trap distribution. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights |  CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJEMS Vol.07(5-6) [October-December 2000] | en_US |
| dc.title | Charge conduction process and rectification effect in ITO/doped PPy/Ag device | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJEMS Vol.07(5-6) [October-December 2000] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 7(5-6) 282-286.pdf | 984.57 kB | Adobe PDF | View/Open |
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