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http://nopr.niscpr.res.in/handle/123456789/24414| Title: | Power loss analysis of silicon carbide devices |
| Authors: | Kumar, A Khanna, V K Sood, S C Gupta, R P |
| Issue Date: | Oct-2000 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | Power loss analysis has been performed for silicon and silicon carbide based power MOSFETs in terms of device electrical characteristics such as forward current, blocking voltage, gate voltage, operating frequency and material properties like mobility, critical electric field, dielectric constant, etc. It has been observed that minimum power losses in silicon carbide power MOSFETs are significantly less compared to silicon devices for same current, voltage (10 A, 500 V and 5 A, 1000 V) and operating frequency (1 kHz-10 MHz). Calculations have also been carried out for minimum device area corresponding to minimum power losses for silicon carbide and silicon power MOSFETs. Silicon carbide devices will need smaller area compared to silicon to operate at a given power level. |
| Page(s): | 287-290 |
| Appears in Collections: | IJEMS Vol.07(5-6) [October-December 2000] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 7(5-6) 287-290.pdf | 799.36 kB | Adobe PDF | View/Open |
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