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http://nopr.niscpr.res.in/handle/123456789/24417| Title: | Effect of swift heavy ion irradiation on the electrical characteristics of Ag/n-Si Schottky diode |
| Authors: | Singh, R Arora, S K Singh, J P Singh, F Kanjilal, D |
| Issue Date: | Oct-2000 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | The modifications in capacitance-voltage (C-V) and current-voltage (I-V) characteristics of Ag/n-Si Schotlky diode induced by 180 MeV 107Ag14+ ion irradiation at low temperature (80 K) have been studied. The C-V and I-V characteristics were recorded in situ at various irradiation fluences (from 5× 1010 to 1× 1013 ions cm-2 ). The capacitance of the unirradiated diode at zero bias was 778 pF and after irradiation with a fluence of 5×1010 ions cm-2 , its value sharply decreased to 286 pF. After this fluence, there was a relatively slow decrease in capacitance. Similarly, the modifications in I-V characteristics induced by swift heavy ion irradiation have also been studied. Thermionic field emission theory of current transport has been applied to explain the observed modifications in I-V characteristics. The variations in characteristic energy parameter Eo, reverse saturation current Is and ideality factor n with fluence have been investigated. The nuclear energy deposition near the metal-semiconductor (MS) interface causes the production of defects which alter the C-V and I-V behaviour of the diode. On the other hand, the electronic energy loss, which is very large in comparison to the nuclear energy loss at the MS interface, may induce partial annealing of the defects. |
| Page(s): | 298-302 |
| Appears in Collections: | IJEMS Vol.07(5-6) [October-December 2000] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 7(5-6) 298-302.pdf | 1.19 MB | Adobe PDF | View/Open |
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