Please use this identifier to cite or link to this item:
http://nopr.niscpr.res.in/handle/123456789/24418| Title: | LPCVD and PECVD silicon nitride for microelectronics technology |
| Authors: | Joshi, B C Eranna, G Runthala, D P Dixit, B B Wadhawan, O P Vyas, P D |
| Issue Date: | Oct-2000 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | Silicon nitride deposition by chemical vapour deposition (CYD) based techniques like low pressure CYD (LPCYD) and plasma enhanced CYD (PECYD) is described in this paper. The technological advantages of silicon nitride deposition by these two techniques, developed at CEERI, are discussed in detail. Applications of LPCYD nitride films for LOCOS, composite gate structures for MNOS and MOS devices are highlighted. The importance of PECYD nitride films for diffusion masking of compound semiconductors, and for passivation in Si, GaAs, and InP devices are demonstrated. Process parameters of LPCYD and PECYD nitride deposition have been optimized for various substrate conditions depending on the technological requirements. Material properties are being explored for various micromachining activities, which includes diaphragm , cantilever, and beam formations. |
| Page(s): | 303-309 |
| Appears in Collections: | IJEMS Vol.07(5-6) [October-December 2000] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 7(5-6) 303-309.pdf | 1.35 MB | Adobe PDF | View/Open |
Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.