Ion beam induced mass transport and correlated structure formation on semiconductor surfaces

Abstract

<span style="font-size: 15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">A quantitative surface analysis of 200 MeV^{<span style="font-size: 12.5pt;mso-bidi-font-size:5.5pt;font-family:" times="" new="" roman","serif""="">107</span>}<span style="font-size:15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">Ag^{<span style="font-size:12.5pt;mso-bidi-font-size:5.5pt;font-family:" times="" new="" roman","serif""="">+14</span>}<span style="font-size:12.5pt;mso-bidi-font-size:5.5pt;font-family:" times="" new="" roman","serif""=""> <span style="font-size:15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">irradiated <111> Si and < 111> InP surfaces has been performed using atomic force microscopy (AFM) technique. The AFM topographs showed the directional effects of ion beam on the morphology of the resulting non-equilibrium surfaces that depend on the ion fluence. The surface developed correlated structures after a critical fluence. The power spectral density analysis of ion irradiated surface showed that the diffusion on the irradiated surface is the dominant mechanism in mass transport at the surface. The fluence dependence of the mass transport is attributed to the cumulative effect of ion irradiation arising due to the overlapping of ion induced damaged zones and electronic excitation induced shear motion of the atoms towards the surface.

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