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dc.contributor.authorKumaragurubaran, S-
dc.contributor.authorBabu, S Moorthy-
dc.contributor.authorSubramanian, C-
dc.contributor.authorRamasamy, P-
dc.date.accessioned2013-12-03T05:13:39Z-
dc.date.available2013-12-03T05:13:39Z-
dc.date.issued2000-10-
dc.identifier.urihttp://hdl.handle.net/123456789/24423-
dc.description331-335en_US
dc.description.abstractThe photorefractive bismuth silicon oxide (Bi12SiO20) and bismuth germanium oxide (Bi12SiO20) crystals were synthesized and Czochralski growth performed in a resistive heating furnace having a vertical temperature gradient of 20°C/cm. Several crystals with <100> orientation were grown. The effect of rotation rate was studied from the fluid flow point of view and the growth parameters were optimised to yield crystals free from the central core and bubbles. The UV-VIS spectra revealed optical absorption edge and transmission in these crystals. The quality of the crystals was analysed by chemical etching studies. The Vickers microhardness studies were also carried out on the (100) plane of the SSO crystal. en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJEMS Vol.07(5-6) [October-December 2000]en_US
dc.titleGrowth and characterization of Bi12SiO20 and Bi12GeO20 crystals en_US
dc.typeArticleen_US
Appears in Collections:IJEMS Vol.07(5-6) [October-December 2000]

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