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http://nopr.niscpr.res.in/handle/123456789/24425Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jayavel, P | - |
| dc.contributor.author | Kumar, J | - |
| dc.contributor.author | Ramasam, P | - |
| dc.contributor.author | Premanand, R | - |
| dc.date.accessioned | 2013-12-03T05:19:44Z | - |
| dc.date.available | 2013-12-03T05:19:44Z | - |
| dc.date.issued | 2000-10 | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/24425 | - |
| dc.description | 340-343 | en_US |
| dc.description.abstract | Forward Voltage - Current (V- I) characteristics are generally used to investigate the Schottky barrier diode parameters, viz., barrier height, ideality factor and series resistance. This method requires a linear region (v > 3kT l q) in the In (I) vs V characteristics. When a metal-semiconductor con tact exhibits relatively high series resistance, it is difficult to determine a linear region in these forward characteristics. Therefore, one can also consider the reverse part of the VI characteristics. Investigations are reponed here on Pd, Au and Ag/n-GaAs Schottky barrier diode parameters under the whole bias range of the VI characteristics. The theoretical and experimental results are compared and discussed. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights |  CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJEMS Vol.07(5-6) [October-December 2000] | en_US |
| dc.title | On the evaluation of Schottky barrier diode parameters of Pd, Au and Ag/n-GaAs | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJEMS Vol.07(5-6) [October-December 2000] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 7(5-6) 340-343.pdf | 777.71 kB | Adobe PDF | View/Open |
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