Please use this identifier to cite or link to this item:
http://nopr.niscpr.res.in/handle/123456789/24426Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Goel, R | - |
| dc.contributor.author | Sil, A | - |
| dc.contributor.author | Anand, H R | - |
| dc.contributor.author | Prabhakar, S R | - |
| dc.date.accessioned | 2013-12-03T05:23:12Z | - |
| dc.date.available | 2013-12-03T05:23:12Z | - |
| dc.date.issued | 2000-10 | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/24426 | - |
| dc.description | 344-349 | en_US |
| dc.description.abstract | Grain growth of ZnO in the system ZnO- Bi2O3(0.5 mol % )-SiO2 (0.4-0.6 mol % )-AI (0.0125 mol %) is reported here for the samples sintered at temperatures 1000-1250°C for 0.5-2 h. These results are compared with our previous studies onZnO- Bi2O3(0.5mol %)-SiO2 (0.4-0.6 mol %) in terms of kinetic grain growth expression : Gn- Gn o = Ko t exp(-Q/RT). It has been observed that due to addition of AI, there is not much change in the values of grain growth exponent (n ). However, the n value decreases with increasing percentage of silica, whereas the activation energy (Q) increases. The impedance analysis shows that upon addition of even a small amount of AI, the grain resistance decreases to a large extent thereby improving the electrical characteristics by increasing the differential conductance between the grain and the grain boundary. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights |  CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJEMS Vol.07(5-6) [October-December 2000] | en_US |
| dc.title | Grain growth studies of Al doped ZnO-Bi2O3 - SiO2 (0.4-0.6 mol %) varistors | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJEMS Vol.07(5-6) [October-December 2000] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 7(5-6) 344-349.pdf | 1.25 MB | Adobe PDF | View/Open |
Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.