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http://nopr.niscpr.res.in/handle/123456789/24427Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Dhanasekaran, R | - |
| dc.contributor.author | Ramasamy, P | - |
| dc.date.accessioned | 2013-12-03T05:24:51Z | - |
| dc.date.available | 2013-12-03T05:24:51Z | - |
| dc.date.issued | 2000-10 | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/24427 | - |
| dc.description | 350-353 | en_US |
| dc.description.abstract | In the present communication, the recent developments in the growth kinetics of vapour phase epitaxy, liquid phase epitaxy and liquid phase electroepitaxy of III-V compound semiconductors have been reviewed. Investigations on the nucleation and growth mechanism of III-V binary, ternary and quaternary compounds grown from VPE are presented, compared with the available experimental results and there is a good agreement between them. Computer simulation technique has been used to construct the concentration profiles of the solute atoms present in front of the crystal-solution interface during the Liquid Phase Epitaxy and Liquid Phase Electroepitaxy of III-V binary, ternary and quaternary compound semiconductors. The growth rate of the materials and hence the thickness of the grown films have also been determined. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights |  CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJEMS Vol.07(5-6) [October-December 2000] | en_US |
| dc.title | Growth kinetics of III -V compound semiconductors | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJEMS Vol.07(5-6) [October-December 2000] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 7(5-6) 350-353.pdf | 917.91 kB | Adobe PDF | View/Open |
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