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http://nopr.niscpr.res.in/handle/123456789/24436Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Pathan, H M | - |
| dc.contributor.author | Sankapal, B R | - |
| dc.contributor.author | Lokhande, C D | - |
| dc.date.accessioned | 2013-12-03T05:49:54Z | - |
| dc.date.available | 2013-12-03T05:49:54Z | - |
| dc.date.issued | 2001-10 | - |
| dc.identifier.issn | 0975-1017 (Online); 0971-4588 (Print) | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/24436 | - |
| dc.description | 271-274 | en_US |
| dc.description.abstract | Semiconducting CdIn2S4 thin films have been deposited on amorphous glass substrates using a chemical method, successive ionic layer adsorption and reaction (SILAR). The influence of preparative parameters on the properties of the films has been studied. The thickness of the film is found to be 0.44 μm. The films have been characterized for structural, optical and electrical transport properties by means of X-ray diffraction, optical absorption, electrical resistivity and thermoelectric power measurements techniques. The films are found to be nanocrystalline with optical bandgap 2.12 eV. The electrical resistivity was of the order of 104 Ω-cm. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights |  CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJEMS Vol.08(5) [October 2001] | en_US |
| dc.title | Preparation of CdIn2S4 thin films by chemical method | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJEMS Vol.08(5) [October 2001] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 8(5) 271-274.pdf | 696.62 kB | Adobe PDF | View/Open |
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