Influence of substrate temperature on the physical properties of reactive evaporated indium oxide films

Abstract

<span style="font-size: 15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">Indium oxide thin films were deposited on glass substrates at 373-673 K by reactive evaporation of indium in an oxygen partial pressure of 2× 10^-^{<span style="font-size:12.5pt;mso-bidi-font-size:5.5pt;font-family:" times="" new="" roman","serif""="">4</span>}<span style="font-size:12.5pt;mso-bidi-font-size:5.5pt;font-family:" times="" new="" roman","serif""=""> <span style="font-size:15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">mbar. The films formed at 373 K were mixed phase of indium and indium oxide where as those formed at temperatures <span style="font-size:13.5pt;mso-bidi-font-size: 6.5pt;font-family:" times="" new="" roman","serif";mso-fareast-font-family:hiddenhorzocr"="">≥<span style="font-size:13.5pt;mso-bidi-font-size:6.5pt;font-family:HiddenHorzOCR; mso-hansi-font-family:" times="" new="" roman";mso-bidi-font-family:hiddenhorzocr"=""> <span style="font-size:15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">473 K were single phase of indium oxide. The electrical resistivity of the films formed at 373 K was high (3.7× 10^-^{<span style="font-size:12.5pt;mso-bidi-font-size:5.5pt;font-family:" arial","sans-serif""="">1 </span>}<span style="font-size:14.0pt;mso-bidi-font-size:7.0pt;font-family: " times="" new="" roman","serif""="">Ω <span style="font-size:15.0pt;mso-bidi-font-size: 8.0pt;font-family:" times="" new="" roman","serif""="">cm) due to their amorphous nature. When the substrate temperature was increased to 673 K. electrical resistivity dec reased to 4.2× 10^-^{<span style="font-size:13.0pt; mso-bidi-font-size:6.0pt;font-family:" times="" new="" roman","serif""="">3</span>}<span style="font-size:13.0pt;mso-bidi-font-size:6.0pt;font-family:" times="" new="" roman","serif""=""> <span style="font-size:14.0pt;mso-bidi-font-size:7.0pt;font-family:" times="" new="" roman","serif""="">Ω <span style="font-size:15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">cm due to improvement in the degree of crystallinity of the films. The Hall mobility of these films increased from 2 cm^{<span style="font-size:13.0pt; mso-bidi-font-size:6.0pt;font-family:" times="" new="" roman","serif""="">2</span>}<span style="font-size:15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">/V sec to 10 cm^{<span style="font-size:13.0pt;mso-bidi-font-size:6.0pt; font-family:" times="" new="" roman","serif""="">2</span>}<span style="font-size: 15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">/V sec with the increase of substrate temperature (423-673 K). The temperature dependence of Hall mobility indicated that the grain boundary scattering of the charge carriers was predominant electrical transport in these films. The optical band gap of the films increased from 3.65 eV to 3.76 eV with the increase of substrate temperature from 473 K to 673 K, respectively.

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