Effect of In content in In<sub>x</sub>Ga<sub>1-x</sub>Sb on breaking of ampoule during growth by vertical directional solidification

Shashidharan, P; Gokhale, N A; Gadkari, D B; Lal, K B; Gokhale, M R; Arora, B M

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Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/25179

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DC Field	Value	Language
dc.contributor.author	Shashidharan, P	-
dc.contributor.author	Gokhale, N A	-
dc.contributor.author	Gadkari, D B	-
dc.contributor.author	Lal, K B	-
dc.contributor.author	Gokhale, M R	-
dc.contributor.author	Arora, B M	-
dc.date.accessioned	2013-12-30T04:52:43Z	-
dc.date.available	2013-12-30T04:52:43Z	-
dc.date.issued	2001-11	-
dc.identifier.issn	0975-1041 (Online); 0019-5596 (Print)	-
dc.identifier.uri	http://hdl.handle.net/123456789/25179	-
dc.description	704-706	en_US
dc.description.abstract	InGaSb crystals have been grown using vertical directional solidification (VDS) technique in closed conical quartz ampoules. In_xGa_1-xSb Crystals with different In mole fractions in the melt (x = 0.1, 0.25, 0.5 and 0.75) have been grown to study the effect of mole fraction on the breaking of the ampoule. Growth with In mole fraction x = 0.5 in the melt resulted in breaking of the ampoule. For other compositions, no breaking of the ampoule occurred. The problem of breaking of ampoule was circumvented by encapsulating the material containing quartz ampoule in another quartz ampoule. The double ampoule prevents the melt from coming into contact with atmospheric air in case of a breakage enabling the growth of crystals from melts with 50 % In composition. Sticking of the ingot to the ampoule has not been observed for any of the compositions.	en_US
dc.language.iso	en_US	en_US
dc.publisher	NISCAIR-CSIR, India	en_US
dc.rights	CC Attribution-Noncommercial-No Derivative Works 2.5 India	en_US
dc.source	IJPAP Vol.39(11) [November 2001]	en_US
dc.title	Effect of In content in In_xGa_1-xSb on breaking of ampoule during growth by vertical directional solidification	en_US
dc.type	Article	en_US
Appears in Collections:	IJPAP Vol.39(11) [November 2001]

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