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http://nopr.niscpr.res.in/handle/123456789/25186Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kumar, Anil | - |
| dc.contributor.author | Kalra, Ekta | - |
| dc.contributor.author | Bose, Srikanta | - |
| dc.contributor.author | Singh, Adarsh | - |
| dc.contributor.author | Bindra, Simrata | - |
| dc.contributor.author | Haldar, Subhasis | - |
| dc.contributor.author | Gupta, R S | - |
| dc.date.accessioned | 2013-12-30T05:20:46Z | - |
| dc.date.available | 2013-12-30T05:20:46Z | - |
| dc.date.issued | 2001-11 | - |
| dc.identifier.issn | 0975-1041 (Online); 0019-5596 (Print) | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/25186 | - |
| dc.description | 731-737 | en_US |
| dc.description.abstract | An analytic model for saturation drain current and substrate current of fully overlapped lightly doped drain (FOLD) MOSFET is developed using pseudo-two-dimensional approximation in the channel and drain regions and expression of maximum electric field is obtained. An express ion for channel length modulation factor is also developed and the substrate current is calculated. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights |  CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJPAP Vol.39(11) [November 2001] | en_US |
| dc.title | Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJPAP Vol.39(11) [November 2001] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 39(11) 731-737.pdf | 1.07 MB | Adobe PDF | View/Open |
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