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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sinha, S K | - |
| dc.contributor.author | Choudhary, S N | - |
| dc.contributor.author | Choudhary, R N P | - |
| dc.date.accessioned | 2014-01-07T09:27:44Z | - |
| dc.date.available | 2014-01-07T09:27:44Z | - |
| dc.date.issued | 2002-04 | - |
| dc.identifier.issn | 0975-1041 (Online); 0019-5596 (Print) | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/25301 | - |
| dc.description | 277-281 | en_US |
| dc.description.abstract | The polycrystalline samples of Mn1/4Cu1/4Mo1/2)O 3were synthesized by a high-temperature solid-state reaction technique. A preliminary X-ray structural study of the compound at room temperature shows the formation of a singlephase compound with a non-centrosymmetric space group P2212 of orthorhombic structure. Studies of dielectric constant (E) and loss tangent (tan δ) both as a function of frequency (500 Hz-10 kHz) at room temperature and temperature (-100- 250 °C) at 10 kHz suggest that the compound undergoes a phase transition at 57°C. The activation energy (Ea) of the compound was calculated from the plot of de conductivity versus inverse or absolute temperature. Variation of de resistivity with electric field (8.55-85.47 kV /m) at room temperature and variation of de resistivity (1012-106 Ωm) with temperature (100-300 °C) at a constant electric field of 85.47 kV /m showed the semi conductor characteristics of the material. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights |  CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJPAP Vol.40(04) [April 2002] | en_US |
| dc.title | Structural and electrical behaviour of Pb(Mn1/4Cu1/4Mo1/2)O 3 ceramics | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJPAP Vol.40(04) [April 2002] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 40(4) 277-281.pdf | 972.07 kB | Adobe PDF | View/Open |
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