Studies on deposition of antimony triselenide thin films by chemical method: SILAR

Sankapal, B R; Ganesan, V; Lokhande, C D

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Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/25462

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DC Field	Value	Language
dc.contributor.author	Sankapal, B R	-
dc.contributor.author	Ganesan, V	-
dc.contributor.author	Lokhande, C D	-
dc.date.accessioned	2014-01-10T11:09:41Z	-
dc.date.available	2014-01-10T11:09:41Z	-
dc.date.issued	2000-08	-
dc.identifier.issn	0975-1041 (Online); 0019-5596 (Print)	-
dc.identifier.uri	http://hdl.handle.net/123456789/25462	-
dc.description	606-610	en_US
dc.description.abstract	Thin film of Sb₂Se₃ have been deposited using a simple and less investigated chemical method namely, successive ionic layer adsorption and reaction (SILAR). The preparative parameters such as concentration, number of immersions, immersion time etc, are optimized to get good quality and well adherent Sh2Sc, thin films. The film are characterized by means of X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), optical absorption and electrical measurements, XRD study shows that films are of Sb₂Se₃ with orthorhomhic crystal structure. SEM and AFM images show that films are nanocrystalline. The optical bandgap is estimated to be 1.8eV. The room temperature dark electrical resistivity is of the order of 10⁵ Ωcm.	en_US
dc.language.iso	en_US	en_US
dc.publisher	NISCAIR-CSIR, India	en_US
dc.rights	CC Attribution-Noncommercial-No Derivative Works 2.5 India	en_US
dc.source	IJPAP Vol.38(08) [August 2000]	en_US
dc.title	Studies on deposition of antimony triselenide thin films by chemical method: SILAR	en_US
dc.type	Article	en_US
Appears in Collections:	IJPAP Vol.38(08) [August 2000]

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