Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/25484
Full metadata record
DC FieldValueLanguage
dc.contributor.authorPatil, A N-
dc.contributor.authorMahajan, R P-
dc.contributor.authorPatankar, K K-
dc.contributor.authorGhatage, A K-
dc.contributor.authorMathe, V L-
dc.contributor.authorPatil, S A-
dc.date.accessioned2014-01-13T04:57:42Z-
dc.date.available2014-01-13T04:57:42Z-
dc.date.issued2000-09-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/25484-
dc.description651-656en_US
dc.description.abstractThe electrical resistivity and thermoelectric power measurements as a function of temperature are carried out for the system CuxFe3-xO4 with x = 1, 0.8, 0.6, 0.4 and 0.2. The lattice constants of the phases are evaluated from X- ray powder data. The thermoelectric powder measurement indicates that the samples are n-type semiconductor and the conduction mechanism is associated with the polaron hopping. The dielectric behaviour is found to be abnormal and this is explained on the basis of Koop's model.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.38(09) [September 2000]en_US
dc.titleConduction mechanism in CuxFe3-xO4en_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.38(09) [September 2000]

Files in This Item:
File Description SizeFormat 
IJPAP 38(9) 651-656.pdf912.78 kBAdobe PDFView/Open


Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.