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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sankapal, B R | - |
| dc.contributor.author | Lokhande, C D | - |
| dc.date.accessioned | 2014-01-13T05:00:18Z | - |
| dc.date.available | 2014-01-13T05:00:18Z | - |
| dc.date.issued | 2000-09 | - |
| dc.identifier.issn | 0975-1041 (Online); 0019-5596 (Print) | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/25486 | - |
| dc.description | 664-669 | en_US |
| dc.description.abstract | Nanocrystalline Bi2Se3-Sb2Se3 composite thin films have been deposited by chemical bath deposition (CBD) method onto fluorine duped tin oxide (FTO) coated glass substrate (sheet resistance 70-100 K Ω-m2) from an aqueous alkaline bath (pH = 9.0 ) at room temperature (27oC). Bismuth nitrate and potassium antimony tartarate are used as Bi3+ and Sb3+ ion sources, respectively with sodium selenosulphite as Se2- ion source. Films have been annealed at 175oC for 4 hr in air. Slight enhancement in crystallinity iss observed after annea ling. These annealed films are used in photoelectrochemical (PEC) cell with configuration as n- Bi2Se3-Sb2Se3/ 0.1 M (NaOH-Na2S-S) /C. Its performance has been tested and results are reported. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights | CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJPAP Vol.38(09) [September 2000] | en_US |
| dc.title | Photoelectrochemical (PEC) cell based on chemically deposited nanocrystalline Bi2Se3-Sb2Se3 composite thin films | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJPAP Vol.38(09) [September 2000] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 38(9) 664-669.pdf | 1.15 MB | Adobe PDF | View/Open |
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