Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/25486
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dc.contributor.authorSankapal, B R-
dc.contributor.authorLokhande, C D-
dc.date.accessioned2014-01-13T05:00:18Z-
dc.date.available2014-01-13T05:00:18Z-
dc.date.issued2000-09-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/25486-
dc.description664-669en_US
dc.description.abstractNanocrystalline Bi2Se3-Sb2Se3 composite thin films have been deposited by chemical bath deposition (CBD) method onto fluorine duped tin oxide (FTO) coated glass substrate (sheet resistance 70-100 K Ω-m2) from an aqueous alkaline bath (pH = 9.0 ) at room temperature (27oC). Bismuth nitrate and potassium antimony tartarate are used as Bi3+ and Sb3+ ion sources, respectively with sodium selenosulphite as Se2- ion source. Films have been annealed at 175oC for 4 hr in air. Slight enhancement in crystallinity iss observed after annea ling. These annealed films are used in photoelectrochemical (PEC) cell with configuration as n- Bi2Se3-Sb2Se3/ 0.1 M (NaOH-Na2S-S) /C. Its performance has been tested and results are reported.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.38(09) [September 2000]en_US
dc.titlePhotoelectrochemical (PEC) cell based on chemically deposited nanocrystalline Bi2Se3-Sb2Se3 composite thin filmsen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.38(09) [September 2000]

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