Characterization of ferrite and silicon carbide based microwave absorber using FSS structures at X-band

Meshram, M R; Agrawal, Nawal K; Sinha, Bharoti; Misra, P S

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Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/25643

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DC Field	Value	Language
dc.contributor.author	Meshram, M R	-
dc.contributor.author	Agrawal, Nawal K	-
dc.contributor.author	Sinha, Bharoti	-
dc.contributor.author	Misra, P S	-
dc.date.accessioned	2014-01-15T04:47:51Z	-
dc.date.available	2014-01-15T04:47:51Z	-
dc.date.issued	2005-02	-
dc.identifier.issn	0975-105X (Online); 0367-8393 (Print)	-
dc.identifier.uri	http://hdl.handle.net/123456789/25643	-
dc.description	71-74	en_US
dc.description.abstract	In this paper the experimental result of microwave absorber with a single layer coating of ferrite and silicon carbide (SiC) based paint for X-band is presented. Samples of M-type hexagonal ferrite powder [Ba(MnTi)₁₈Fe_8.4O₁₉] has been developed by dry attrition and sintering process. These developed ferrite powder and SiC powder have been mixed in epoxy resins to form a microwave absorbing paint. This paint was coated on aluminum sheet for absorption studies. The frequency selective surface (FSS) patterns are embedded on the surface of absorber sheet and tested experimentally at X-Band. It was found that SiC based microwave absorbing paint provide wide band absorption characteristics with minimum absorption of 10 dB from 9.5 to 12 GHz for a coating thickness of 1.84 mm.	en_US
dc.language.iso	en_US	en_US
dc.publisher	NISCAIR-CSIR, India	en_US
dc.relation.ispartof	94.106b; 42.68 Ay	en_US
dc.relation.ispartofseries	601N22/00	en_US
dc.rights	CC Attribution-Noncommercial-No Derivative Works 2.5 India	en_US
dc.source	IJRSP Vol.34(1) [February 2005]	en_US
dc.subject	Hexagonal ferrite	en_US
dc.subject	Silicon Carbide	en_US
dc.subject	Microwave absorber	en_US
dc.subject	Frequency selective surface	en_US
dc.subject	Radar cross-section	en_US
dc.title	Characterization of ferrite and silicon carbide based microwave absorber using FSS structures at X-band	en_US
dc.type	Article	en_US
Appears in Collections:	IJRSP Vol.34(1) [February 2005]

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