<span style="font-size:14.0pt;line-height: 115%;font-family:"Times New Roman";mso-fareast-font-family:"Times New Roman"; color:black;mso-ansi-language:EN-IN;mso-fareast-language:EN-IN;mso-bidi-language: HI" lang="EN-IN">Photoelectrochemical (PEC) studies on chemically deposited Bi₂Se₃ thin films</span>

Abstract

Semiconducting Bi₂Se₃ thin films have been prepared from aqueous alkaline bath onto fluorine-doped tin oxide (FTO) glass substrates (sheet resistance ~7Ω -cm²) by chemical bath deposition (CBD) at room temperature (27 °C). The films formed are of nanocrystalline, smooth, homogeneous and well covered to the substrate surface as evidenced from X –ray diffraction (XRD) and scanning electron microscopy (SEM) studies, respectively. These films are annealed at 200 °C for 4hr in air. The annealed Bi₂Se₃ films are used for photoelectrochemical (PEC) characterization using polysulphide as an

<span style="font-size:14.0pt;line-height:115%;font-family:" times="" new="" roman";="" mso-fareast-font-family:"times="" roman";color:black;mso-ansi-language:en-in;="" mso-fareast-language:en-in;mso-bidi-language:hi"="" lang="EN-IN">electrolyte and graphite as a counter electrode. The characteristics such as current-voltage (I-V), photovoltaic output and capacitance etc. have been studied and results are reported.</span>