Analytical two-dimensional model for pulsed doped InP-based lattice-matched <span style="font-size:14.0pt;line-height:115%;font-family:"Times New Roman"; mso-fareast-font-family:"Times New Roman";color:black;mso-ansi-language:EN-IN; mso-fareast-language:EN-IN;mso-bidi-language:HI" lang="EN-IN">HEMTs for high frequency applications</span>

Abstract

An analytical two-dimensional model for pulsed doped HEMT is developed for InAlAs/ InGaAs heterostructure using Greens function. Non- linear variation of sheet carrier density with quasi-Fermi energy is used to formulate the

<span style="font-size:14.0pt;line-height:115%;font-family:" times="" new="" roman";="" mso-fareast-font-family:"times="" roman";color:black;mso-ansi-language:en-in;="" mso-fareast-language:en-in;mso-bidi-language:hi"="" lang="EN-IN">characteristics. The exact variation of sheet carrier density with gate voltage and the extension of gate boundaries with the variation of gate-to-drain and gate-to-source voltages are included in the analysis and the electric field profile has also been extensively studied considering the short channel effects. Results so obtained are in close proximity with published data.</span>