Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/26219
Full metadata record
DC FieldValueLanguage
dc.contributor.authorSingh, Devraj-
dc.contributor.authorYadav, R R-
dc.contributor.authorTiwari, Arvind Kumar-
dc.date.accessioned2014-01-27T17:17:45Z-
dc.date.available2014-01-27T17:17:45Z-
dc.date.issued2002-12-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/26219-
dc.description845-849en_US
dc.description.abstractThe ultrasonic phonon-viscosity loss and thermo-elastic loss have been studied in octahedral semiconductors along< 100>, <110> and <111> crystallographic directions as a function of high temperature (=300K). For this evaluation, the temperature dependence of second- and third-order elastic constants starting with two basic parameters has been computed. The thermo-elastic loss is very small as compared to phonon-viscosity loss. The behaviour of temperature dependence of ultrasonic attenuation is the same as in other semiconducting materials.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.40(12) [December 2002]en_US
dc.titleUltrasonic attenuation in semiconductorsen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.40(12) [December 2002]

Files in This Item:
File Description SizeFormat 
IJPAP 40(12) 845-849.pdf885.34 kBAdobe PDFView/Open


Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.