Growth and electrical transport properties of dithallium selenide single crystal

Abstract

<span style="font-size:14.0pt;line-height:115%;font-family:" times="" new="" roman";="" mso-fareast-font-family:"times="" roman";color:black;mso-ansi-language:en-in;="" mso-fareast-language:en-in;mso-bidi-language:hi"="" lang="EN-IN">Crystals<span style="font-size:14.0pt;line-height:115%;font-family:" times="" new="" roman";="" mso-fareast-font-family:"times="" roman";color:black;mso-ansi-language:en-in;="" mso-fareast-language:en-in;mso-bidi-language:hi"="" lang="EN-IN"> of the Tl₂Se were synthesized with the aid of locally designed simple new growth technique. This technique is based on Bridgman growth method. Electrical conductivity, Hall effect and Hall mobility were investigated as a function of temperature in the range 225-500K, on <i>p</i>-type single crystals.Measurements were crried out perpendicular to the <i>c</i>-axix. Variation of the charge carriers against temperatures was discussed. The energy gap width as well as the ionozation energy was computed. At room temperature the Hall mobility was found to be μ=500cm²/V.</span></span>