<span style="font-size:14.0pt;line-height: 115%;font-family:"Times New Roman";mso-fareast-font-family:"Times New Roman"; color:black;mso-ansi-language:EN-IN;mso-fareast-language:EN-IN;mso-bidi-language: HI" lang="EN-IN">Electrical properties of amorphous Te_38+yAs_40-y Ge₁₀Si₁₂</span>

Abstract

<span style="font-size: 14.0pt;line-height:115%;font-family:" times="" new="" roman";mso-fareast-font-family:="" "times="" roman";color:black;mso-ansi-language:en-in;mso-fareast-language:="" en-in;mso-bidi-language:hi"="" lang="EN-IN">The ac conductivity&nbsp; and the dielectric constant have been studied for the chalcogenide glasses Te_28+YAs_40-Y Ge₁₀Si₁₂ (y=0.3,6,7 at %) as a function of temperature (290-383<i>k</i>) and frequency (10²-10⁵Hz). The experimental results indicate that the ac conductivity and the dielectric constant depend on the temperature and frequency and the Te content. The ac conductivity is found to obey the ω^s law, in accordance with the hopping model and <i>s </i>is found to be temperature dependent and its value goes down as the temperature is increased. The temperature dependence of the ac conductivity can be reasonably interpreted in terms of the correlated barrier-hopping <span style="font-size:14.0pt;line-height:115%;font-family:" times="" new="" roman";="" mso-fareast-font-family:hiddenhorzocr;color:black;mso-ansi-language:en-in;="" mso-fareast-language:en-in;mso-bidi-language:hi"="" lang="EN-IN">model (CBH).</span></span>