Electrical properties of some chalcogenide glassy alloys of the system Se_100-<i>X</i>In<i>_X</i>

Abstract

DC electrical properties of the system Se_100-<i>X</i>In<i>_X</i> (where x =5, 10, 15 and 20 at. %) have been carried out <i>I- V </i>characteristics of this system are discussed in terms of Pool-Frenkel and Schottkey effect. The jump distance <i>(d), </i>charge carrier concentration (<i>n</i>) and the trap depth (φ) have been deduced for the system. According to Arrhenius Eq. of conductivity, the activation energy of conduction Δ<i>w</i>₁<i> </i>and Δ<i>w</i>₂ for the two arms of conductivity have been found in the range from 0.18 to1.2 eV. Both of mobility (μ) and diffusion coefficients are calculated for different compositions at different ambient temperatures. The activation energy due to mobility <i>(</i>Δ<i>U) </i>and diffusion <i>(</i>Δ<i>Q) </i>mechanisms have been<i> </i>deduced and their values were ranged from 0.02 to 0.4 eV. The behaviour of Δ<i>w</i>₁, Δ<i>U</i> and Δ<i>Q</i> has the same trend with<i> </i>composition, which indicate that the conduction mechanism is controlled by one type of process. Meyer-Neldel rule has been applied on our results and a confirmation of this rule has been found.