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http://nopr.niscpr.res.in/handle/123456789/26708Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sartale, S D | - |
| dc.contributor.author | Lokhande, C D | - |
| dc.date.accessioned | 2014-02-20T13:05:12Z | - |
| dc.date.available | 2014-02-20T13:05:12Z | - |
| dc.date.issued | 2000-01 | - |
| dc.identifier.issn | 0975-1041 (Online); 0019-5596 (Print) | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/26708 | - |
| dc.description | 48-52 | en_US |
| dc.description.abstract | Successive ionic layer adsorption and reaction (SILAR) method was used to deposit cobalt sulphide (CoS) thin films on amorphous glass and Si (III) wafer substrates in aqueous medium using cobalt sulphate (CoSO4 ) solution as the cationic precursor and sodium sulphide (Na2S) solution as the anionic precursor. The conditions for the formation of good quantity films such as concentration pH and temperature of anionic and cationic precursor solutions, immersion and rinsing times and number of immersion were optimised. The structural, optimal and electrical properties of the films arc reported. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights |  CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJPAP Vol.38(01) [January 2000] | en_US |
| dc.title | Deposition of cobalt sulphide thin films by successive ionic layer adsorption and reaction (SILAR) method and their characterization | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJPAP Vol.38(01) [January 2000] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 38(1) 48-52.pdf | 794.99 kB | Adobe PDF | View/Open |
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