<span style="font-size:14.0pt;line-height: 115%;font-family:"Times New Roman";mso-fareast-font-family:"Times New Roman"; color:black;mso-ansi-language:EN-IN;mso-fareast-language:EN-IN;mso-bidi-language: HI" lang="EN-IN">Preparntion and characterization of chemically deposited As₂S₃ thin films</span>

Abstract

A method for chemical bath deposition of As₂S₃ thin films in an aqueous acidic medium is described. As₂O₃, was used as As³⁺ ion source and thioacetamide as a S^2- ion source. Sodium<i> </i>salt of ethylene diamine tetracetic acid was used as a complexing agent for As₂O₃. The preparative parameters like solution concentration, volume of sulphur ion source etc. have been optimized.

<span style="font-size:14.0pt;line-height:115%;font-family:" times="" new="" roman";="" mso-fareast-font-family:"times="" roman";color:black;mso-ansi-language:en-in;="" mso-fareast-language:en-in;mso-bidi-language:hi"="" lang="EN-IN">X-ray diffraction, SEM, optical absorption, electrical resistivity, etc. are used to characterize the films.</span>