Please use this identifier to cite or link to this item:
http://nopr.niscpr.res.in/handle/123456789/27151| Title: | Modelling and simulation of new MOSFET negative resistance for VLSI applications |
| Authors: | Al-Marzouki, Fahad |
| Issue Date: | Jun-1999 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | A new voltage controlled negative resistance has been designed and realized using the traditional MOSFET technology. Its basic idea depends on the contractions of the channel width proportionally with the drain voltage: An additional voltage VR is employed to control the amount of channel contractions and consequently controlling the value of the negative resistance. The new negative resistance is expected to have a speed of response, a power consumption and a noise figure which are noticeably better than those of the already known devices. It is also characterized by a wider dynamics of operation and a good temperature stability which makes it usable for many new VLSI applications. |
| Page(s): | 490-494 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Appears in Collections: | IJPAP Vol.37(06) [June 1999] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 37(6) 490-494.pdf | 926.77 kB | Adobe PDF | View/Open |
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