<span style="font-size:14.0pt;line-height: 115%;font-family:" times="" new="" roman";mso-fareast-font-family:"times="" roman";="" color:black;mso-ansi-language:en-in;mso-fareast-language:en-in;mso-bidi-language:="" hi"="" lang="EN-IN">Growth morphology and compositional analysis of In_xGa_1-xSb crystals-grown by vertical directional solidification technique</span>

Abstract

In_xGa_1-xSb (<i>x</i>= 0.5) single crystals of 12 mm diameter and 50-60 mm length have been grown from stoichiometric source materials by using vertical directional solidification technique. The optimized growth conditions are ampoule translation velocity 0.84μm/sec, rotation speed 10 rpm and ampoule with argon pressure (100 torr). The axial compositional profile has been

determined by Vegard-law and showed mixing of the melt. Hall measurements reveal the conversion of <i>n</i>-type to <i>p</i>-type<i> </i>conduction along the growth axis and vice versa. Radial resistivity measurements by four probe exhibited the nearly

<span style="font-size:14.0pt;line-height:115%;font-family:" times="" new="" roman";="" mso-fareast-font-family:"times="" roman";color:black;mso-ansi-language:en-in;="" mso-fareast-language:en-in;mso-bidi-language:hi"="" lang="EN-IN">homogeneous growth . The growth morphology was attributed to the intrinsic crystallographic microstructures.</span>