Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/29343
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dc.contributor.authorOhtake, Toshihito-
dc.date.accessioned2014-09-05T06:58:46Z-
dc.date.available2014-09-05T06:58:46Z-
dc.date.issued2014-09-
dc.identifier.issn0975-1084 (Online); 0022-4456 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/29343-
dc.description598-600en_US
dc.description.abstractWe confirmed methyl termination on n-Si(111) surface by ATR-FTIR measurement, which was fabricated by a photo chloro-reaction and its methylation. The coverage of the methylation was about 63.7 %, and the surface was not re-terminated by hydrogen. Photoelectrochemical properties of the n-Si(111) was measured as an electrode for a photoelectrochemical cell, and an onset potential obtaining photocurrent for the methyl terminated n-Si(111) electrode was observed as negative shift at 70 mV comparing with that of the hydrogen terminated n-Si(111) electrode. Therefore, the negative shift would be expected for improving open circuit voltage towards solar cell.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceJSIR Vol.73(09) [September 2014]en_US
dc.subjectMethyl terminationen_US
dc.subjectATR-FTIRen_US
dc.subjectSemiconductor electrodeen_US
dc.subjectSien_US
dc.subjectPhotoelectrochemical cellen_US
dc.titleMethyl termination and ATR-FTIR evaluation of n-Si (111) electrode towards photoelectrochemical cell fabricationen_US
dc.typeArticleen_US
Appears in Collections:JSIR Vol.73(09) [September 2014]

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