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http://nopr.niscpr.res.in/handle/123456789/29733Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Singh, V | - |
| dc.contributor.author | Kumar, Vipin | - |
| dc.date.accessioned | 2014-11-05T10:42:28Z | - |
| dc.date.available | 2014-11-05T10:42:28Z | - |
| dc.date.issued | 1997-08 | - |
| dc.identifier.issn | 0975-1017 (Online); 0971-4588 (Print) | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/29733 | - |
| dc.description | 163-165 | en_US |
| dc.description.abstract | H-VI Semiconductors are of great importance due to their applications in various electro-optic devices. CdS is a suitable window material for CdS/CdTe and CdS/Cu2S heterojunction solar cells. ZnS with band gap 3.54 eV can be substituted into CdS to increase the band gap of window material. The use of CdxZn1-xS in place of Cd permits a greater open circuit voltage. On preparation of the sintered film of CdXZn1-XS, the problem of diffusion arises, which disturbs the stoichiometry of the film. Here, methods have been suggested to preserve stoichiometry and minimize the diffusion problem in preparation of sintered films. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights |  CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJEMS Vol.04(4) [August 1997] | en_US |
| dc.title | Study of compositional and diffusion effect in CdxZn1-xS sintered films | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJEMS Vol.04(4) [August 1997] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 4(4) 163-165.pdf | 183.08 kB | Adobe PDF | View/Open |
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