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http://nopr.niscpr.res.in/handle/123456789/29740Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chattopadhyay, P | - |
| dc.contributor.author | Majumdar, L | - |
| dc.date.accessioned | 2014-11-05T11:16:22Z | - |
| dc.date.available | 2014-11-05T11:16:22Z | - |
| dc.date.issued | 1997-10 | - |
| dc.identifier.issn | 0975-1017 (Online); 0971-4588 (Print) | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/29740 | - |
| dc.description | 220-224 | en_US |
| dc.description.abstract | A method for the determination of the interface state density of a metal-semiconductor field effect transistor is developed which requires an analysis of the temperature dependence of threshold voltage over a certain range of temperature. The method is used to estimate the values of interface state densities of GaAs MESFETs from the available experimental data on threshold voltage in the literature. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights |  CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJEMS Vol.04(5) [October 1997] | en_US |
| dc.title | Determination of interface state density of metal-semiconductor field effect transistors | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJEMS Vol.04(5) [October 1997] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 4(5) 220-224.pdf | 344.63 kB | Adobe PDF | View/Open |
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